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Growth of halide perovskites thin films for thermoelectric applications

Published online by Cambridge University Press:  25 June 2019

Shrikant Saini ,
Ajay Kumar Baranwal Open the ORCID record for Ajay Kumar Baranwal [Opens in a new window] ,
Tomohide Yabuki ,
Shuzi Hayase  and
Koji Miyazaki
Shrikant Saini*
Affiliation:
Department of Mechanical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, Japan.
Ajay Kumar Baranwal
Affiliation:
i-Powered Energy System Research Center (iPRC), The University of Electro-Communications, Chofu Tokyo, Japan.
Tomohide Yabuki
Affiliation:
Department of Mechanical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, Japan.
Shuzi Hayase
Affiliation:
i-Powered Energy System Research Center (iPRC), The University of Electro-Communications, Chofu Tokyo, Japan.
Koji Miyazaki
Affiliation:
Department of Mechanical Engineering, Kyushu Institute of Technology, Tobata, Kitakyushu, Japan.
*
*saini.shrikant456@mail.kyutech.jp
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Abstract

Thermoelectric materials can play an important role to develop a sustainable energy source for internet of things devices near room temperature. In this direction, it is important to have a thermoelectric material with high thermoelectric performance. Cesium tin triiodide (CsSnI3) single crystal perovskite has shown high value of Seebeck coefficient and ultra low thermal conductivity which are necessary conditions for high thermoelectric performance. Here, we report the thermoelectric response of CsSnI3 thin films. These films are prepared by cost effective wet spin coating process at different baking temperature. Films were characterized using X-ray diffraction and scanning electron microscopy. In our case, films baked at 130°C for 5 min have shown the best thermoelectric performance at room temperature with: Seebeck coefficient 115 μV/K and electrical conductivity 124 S/cm, thermal conductivity 0.36 W/m·K and figure of merit ZT of 0.137.

Keywords

thermoelectricperovskitesthin filmthermal conductivity
Type
Articles
Information
MRS Advances , Volume 4 , Issue 30: Electronics and Photonics , 2019 , pp. 1719 - 1725
Copyright
Copyright © Materials Research Society 2019 

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