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Growth of Monolayer MoS2 on Hydrophobic Substrates as a Novel and Feasible Method to Prevent the Ambient Degradation of Monolayer MoS2

Published online by Cambridge University Press:  02 July 2020

Kevin Yao Open the ORCID record for Kevin Yao [Opens in a new window] ,
Dave Banerjee ,
John D. Femi-Oyetoro ,
Evan Hathaway ,
Yan Jiang ,
Brian Squires ,
Daniel C. Jones ,
Arup Neogi ,
Jingbiao Cui  and
Usha Philipose
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Kevin Yao
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Dave Banerjee
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
John D. Femi-Oyetoro
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Evan Hathaway
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Yan Jiang
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Brian Squires
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Daniel C. Jones
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Arup Neogi
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Jingbiao Cui
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Usha Philipose
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Aryan Agarwal
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Ernest Lu
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Steven Yao
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Mihir Khare
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Ibikunle A. Ojo
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Gage Marshall
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
Jose Perez
Affiliation:
Department of Physics, University of North Texas, Denton, TX76203, United States
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Abstract

Monolayer (ML) molybdenum disulfide (MoS₂) is a novel 2-dimensional (2D) semiconductor whose properties have many applications in devices. Despite its potential, ML MoS₂ is limited in its use due to its degradation under exposure to ambient air. Therefore, studies of possible degradation prevention methods are important. It is well established that air humidity plays a major role in the degradation. In this paper, we investigate the effects of substrate hydrophobicity on the degradation of chemical vapor deposition (CVD) grown ML MoS2. We use optical microscopy, atomic force microscopy (AFM), and Raman mapping to investigate the degradation of ML MoS2 grown on SiO2 and Si3N4 that are hydrophilic and hydrophobic substrates, respectively. Our results show that the degradation of ML MoS₂ on Si3N4 is significantly less than the degradation on SiO2. These results show that using hydrophobic substrates to grow 2D transition metal dichalcogenide ML materials may diminish ambient degradation and enable improved protocols for device manufacturing.

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Articles
Information
MRS Advances , Volume 5 , Issue 52-53: Nanoscale and Quantum Materials , 2020 , pp. 2707 - 2715
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Copyright
Copyright © 2020 Materials Research Society

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References

Wang, Q.H., Kalantar-Zadeh, K., Kis, A., Coleman, J.N. and Strano, M.S., Nat. Nanotechnol. 7, 699 (2012).CrossRefGoogle Scholar
Gao, J., Li, B., Tan, J., Chow, P., Lu, T.M. and Koratkar, N., ACS Nano 10, 2628 (2016).CrossRefGoogle Scholar
Şar, H., Özden, A., Demiroğlu, İ., Sevik, C., Perkgoz, N.K. and Ay, F., Phys. Status Solidi, 13, 1800687 (2019).10.1002/pssr.201800687CrossRefGoogle Scholar
Kotsakidis, J.C., Zhang, Q., de Parga, A.L.V., Currie, M., Helmerson, K., Gaskill, D.K. and Fuhrer, M.S., Nano Lett. 19, 5205 (2019).CrossRefGoogle Scholar
Budania, P., Baine, P., Montgomery, J., McGeough, C., Cafolla, T., Modreanu, M., McNeill, D., Mitchell, N., Hughes, G. and Hurley, P., MRS Commun. 7, 813 (2017).CrossRefGoogle Scholar
Afanasiev, P. and Lorentz, C., J. Phys. Chem. C 123, 7486 (2019).CrossRefGoogle Scholar
Yao, K., Femi-Oyetoro, J.D., Yao, S., Jiang, Y., El Bouanani, L., Jones, D.C., Ecton, P.A., Philipose, U., El Bouanani, M., Rout, B. and Neogi, A., 2d Mater. 7, 015024 (2019).CrossRefGoogle Scholar
Cao, Y., Mishchenko, A., Yu, G.L., Khestanova, E., Rooney, A.P., Prestat, E., Kretinin, A.V., Blake, P., Shalom, M.B., Woods, C. and Chapman, J., Nano Lett., 15, 4914 (2015).CrossRefGoogle Scholar
Favron, A., Gaufrès, E., Fossard, F., Phaneuf-L'Heureux, A.L., Tang, N.Y., Lévesque, P.L., Loiseau, A., Leonelli, R., Francoeur, S. and Martel, R., Nat. Mat., 14, 826 (2015).10.1038/nmat4299CrossRefGoogle Scholar
Jiang, Y., Lin, Y., Cui, J. and Philipose, U., J. Nanomat, 2018, 6192532 (2018).Google Scholar
MTI Corp. Available at: https://www.mtixtl.com/S3N4-film-1.aspx (accessed 26 March 2020).Google Scholar
Barhoumi, L., Baraket, A., Nooredeen, N.M., Ali, M.B., Abbas, M.N., Bausells, J. and Errachid, A., Electroanal. 29, 1586 (2017).CrossRefGoogle Scholar
Zhan, X., Yan, Y., Zhang, Q. and Chen, F., J. Mater. Chem. A 2, 9390 (2014).CrossRefGoogle Scholar
Mukherjee, B., Tseng, F., Gunlycke, D., Amara, K.K, Eda, G. and Simsek, E., Opt. Mater. Express 5, 447 (2015).CrossRefGoogle Scholar
Yamamoto, M., Einstein, T.L., Fuhrer, M.S. and Cullen, W.G., J. Phys. Chem, 117, 25643-25649 (2013)Google Scholar
Parkin, W.M., Balan, A., Liang, L., Das, P.M., Lamparski, M., Naylor, C.H., Rodríguez-Manzo, J.A., Johnson, A.C., Meunier, V. and Drndic, M., ACS Nano, 10, 4134-4142 (2016).CrossRefGoogle Scholar
Kang, K., Godin, K., Kim, Y.D., Fu, S., Cha, W., Hone, J. and Yang, E.H., Adv. Mater., 29, 1603898 (2017).CrossRefGoogle Scholar
Kim, S.Y., Kwak, J., Kim, J.H., Lee, J.U., Jo, Y., Kim, S.Y., Cheong, H., Lee, Z. and Kwon, S.Y., 2d Mater., 4, 011007 (2016).CrossRefGoogle Scholar