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Growth of NbO2 by Molecular-Beam Epitaxy and Characterization of its Metal-Insulator Transition

Published online by Cambridge University Press:  02 August 2017

Lindsey E. Noskin ,
Ariel Seidner H.  and
Darrell G. Schlom
Lindsey E. Noskin*
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853, U.S.A.
Ariel Seidner H.
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853, U.S.A.
Darrell G. Schlom
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY14853, U.S.A. Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY14853, U.S.A.
*
*(Email: len28@cornell.edu)

Abstract

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Thin films of NbO2 are synthesized by oxide molecular-beam epitaxy on (001) MgF2 substrates, which are isostructural (rutile structure) with NbO2. Two growth parameters are systematically varied in order to identify appropriate growth conditions: growth temperature and the partial pressure of O2 during film growth. θ-2θ X-ray diffraction measurements identify two dominant phases in this system at background oxygen pressures in the (0.2–6)×10–7 Torr range: rutile NbO2 is favored at higher growth temperature, while Nb2O5 forms at lower growth temperature. Electrical resistivity measurements were made between 350 K and 675 K on three epitaxial NbO2 films in a nitrogen ambient. These measurements show that NbO2 films grown in higher partial pressures of molecular oxygen have larger temperature-dependent changes in electrical resistivity and higher resistivity at room temperature.

Keywords

metal-insulator transitionmolecular beam epitaxy (MBE)thin film
Type
Articles
Information
MRS Advances , Volume 2 , Issue 52: Electronic Devices and Materials , 2017 , pp. 3031 - 3036
Copyright
Copyright © Materials Research Society 2017 

References

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