Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-29T06:41:22.631Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Deep-Level Defects Lateral Distribution in Active Layers of Multicrystalline Silicon Solar Cells

Published online by Cambridge University Press:  22 May 2017

Vladimir G. Litvinov ,
Alexander V. Ermachikhin ,
Dmitry S. Kusakin ,
Nikolay V. Vishnyakov ,
Valery V. Gudzev ,
Andrey S. Karabanov ,
Sergey M. Karabanov  and
Sergey P. Vikhrov
Vladimir G. Litvinov*
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Alexander V. Ermachikhin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Dmitry S. Kusakin
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Nikolay V. Vishnyakov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Valery V. Gudzev
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Andrey S. Karabanov
Affiliation:
Helios-Resource Ltd., Saransk, Mordovia, 126/1 Proletarskaya Str., 430001, Russian Federation
Sergey M. Karabanov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
Sergey P. Vikhrov
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarin Str., Ryazan, 390005, Russian Federation
*
*(Email: vglit@yandex.ru)
Get access

Abstract

The influence of deep level defects lateral distribution in active layers of multicrystalline Si-based standard solar cells is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. One type of solar cells with conversion efficiency 20.4% was studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). From various places along the diagonal of solar cell’s substrate with 20.4% efficiency nine pieces with an area ∼20 mm2 were extracted and studied. I-DLTS spectra of the five pieces from solar cell were measured. The features of deep levels defects concentration lateral distribution along the SC’s surface were studied.

Keywords

photovoltaicelectrical propertiesdeep level transient spectroscopy (DLTS)
Type
Articles
Information
MRS Advances , Volume 2 , Issue 53: Energy Storage and Conversion , 2017 , pp. 3141 - 3146
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Litvinov, V.G. et al. ., MRS Advances. 1, Issue 14, 911 (2016).CrossRefGoogle Scholar
Lang, D.V., J. Appl. Phys. 45, 3023 (1974).CrossRefGoogle Scholar
Litvinov, V.G., Vishnyakov, N.V., Gudzev, V.V., Mishustin, V.G., Karabanov, S.M., Vikhrov, S.P. and Karabanov, A.S. in Power Electronics and Renewable Energy Conversion (USB Proc. IEEE International Conference on Industrial Technology, 2015) pp. 1071–1074.Google Scholar
Mamor, M., Willander, M., Auret, F.D., Meyer, W. and Sveinbjornsson, E., Physical Review B 63, 045201 (2000).CrossRefGoogle Scholar