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Ion Beam Etch for Patterning of Resistive RAM (ReRAM) Devices

Published online by Cambridge University Press:  16 January 2017

Narasimhan Srinivasan ,
Katrina Rook ,
Ivan Berry ,
Binyamin Rubin  and
Frank Cerio
Narasimhan Srinivasan
Affiliation:
Advanced Deposition and Etch, Veeco Instruments, 1 Terminal Drive, Plainview, NY 11803
Katrina Rook*
Affiliation:
Advanced Deposition and Etch, Veeco Instruments, 1 Terminal Drive, Plainview, NY 11803
Ivan Berry
Affiliation:
Etch Product Group, Lam Research Corporation, 4400 Cushing Parkway, Fremont, CA 95438
Binyamin Rubin
Affiliation:
Advanced Deposition and Etch, Veeco Instruments, 1 Terminal Drive, Plainview, NY 11803
Frank Cerio
Affiliation:
Advanced Deposition and Etch, Veeco Instruments, 1 Terminal Drive, Plainview, NY 11803
*
*(Email: krook@veeco.com)
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Abstract

We investigate the feasibility of inert ion beam etch (IBE) for subtractive patterning of ReRAM-type structures. We report on the role of the angle-dependent ion beam etch rates in device area control and the minimization of sidewall re-deposition. The etch rates of key ReRAM materials are presented versus incidence angle and ion beam energy. As the ion beam voltage is increased, we demonstrate a significant enhancement in the relative etch rate at glancing incidence (for example, by a factor of 2 for HfO2). Since the feature sidewall is typically exposed to glancing incidence, this energy-dependence plays a role in optimization of the feature shape and in sidewall re-deposition removal.

We present results of SRIM simulations to estimate depth of ion-bombardment damage to the TMO sidewall. Damage is minimized by minimizing ion energy; its depth can be reduced by roughly a factor of 5 over typical IBE energy ranges. For example, ion energies of less than ∼250 eV are indicated to maintain damage below ∼1nm. Multi-angle and multi-energy etch schemes are proposed to maximize sidewall angle and minimize damage, while eliminating re-deposition across the TMO. We utilize 2-D geometry/3-D etch model to simulate IBE patterning of tight-pitched ReRAM features, and generate etched feature shapes.

Keywords

ion-beam processingoxidememory
Type
Articles
Information
MRS Advances , Volume 2 , Issue 4: Electronics, Magnetics and Photonics , 2017 , pp. 247 - 252
Copyright
Copyright © Materials Research Society 2017 

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References

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