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Low Cost Method for Generating Periodic Nanostructures by Interference Lithography Without the Use of an Anti-Reflection Coating

Published online by Cambridge University Press:  30 January 2017

Omree Kapon ,
Merav Muallem ,
Alex Palatnik ,
Hagit Aviv  and
Yaakov. R. Tischler
Omree Kapon*
Affiliation:
Department of Chemistry, Bar-Ilan University, Ramat-Gan 5920002, Israel Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel
Merav Muallem
Affiliation:
Department of Chemistry, Bar-Ilan University, Ramat-Gan 5920002, Israel Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel
Alex Palatnik
Affiliation:
Department of Chemistry, Bar-Ilan University, Ramat-Gan 5920002, Israel Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel
Hagit Aviv
Affiliation:
Department of Chemistry, Bar-Ilan University, Ramat-Gan 5920002, Israel Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel
Yaakov. R. Tischler
Affiliation:
Department of Chemistry, Bar-Ilan University, Ramat-Gan 5920002, Israel Bar-Ilan University Institute for Nanotechnology and Advanced Materials, Ramat-Gan 5920002, Israel
*
*(Email: omreekapon@gmail.com)
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Abstract

Interference lithography has proven to be a useful technique for generating periodic sub-diffraction limited nanostructures. Interference lithography can be implemented by exposing a photoresist polymer to laser light using a two-beam arrangement or a one-beam configuration based on a Lloyd’s Mirror Interferometer. For typical photoresist layers, an anti-reflection coating must be deposited on the substrate to prevent adverse reflections from cancelling the holographic pattern of the interfering beams. For silicon substrates, such coatings are typically multilayered and complex in composition. By thinning the photoresist layer to a thickness well below the quarter wavelength of the exposing beam, we demonstrate that interference gratings can be generated without an anti-reflection coating on the substrate. We used ammonium dichromate doped polyvinyl alcohol as the positive photoresist because it provides excellent pinhole free layers down to thicknesses of 40 nm, and can be cross-linked by a low-cost single mode 457 nm laser and etched in water. Gratings with a period of 320 nm and depth of 4 nm were realized, as well as a variety of morphologies depending on the photoresist thickness. This simplified interference lithography technique promises to be useful for generating periodic nanostructures with high fidelity and minimal substrate treatments.

Keywords

nanostructurelithography (deposition)polymer
Type
Articles
Information
MRS Advances , Volume 2 , Issue 17: Processing and Manufacturing , 2017 , pp. 927 - 932
Copyright
Copyright © Materials Research Society 2017 

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References

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