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Metal whisker growth induced by localized, high-intensity DC electric fields

Published online by Cambridge University Press:  23 April 2018

Vamsi Borra Open the ORCID record for Vamsi Borra [Opens in a new window] ,
Osama Oudat ,
Daniel G. Georgiev ,
Victor G. Karpov  and
Diana Shvydka
Vamsi Borra*
Affiliation:
Department of EECS, University of Toledo, Toledo, Ohio, U.S.A.
Osama Oudat
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, Ohio, U.S.A.
Daniel G. Georgiev
Affiliation:
Department of EECS, University of Toledo, Toledo, Ohio, U.S.A.
Victor G. Karpov
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, Ohio, U.S.A.
Diana Shvydka
Affiliation:
Department of Radiation Oncology, University of Toledo, Toledo, Ohio, U.S.A.
*
*(Email: vamsi.borra@utoledo.edu)
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Abstract

In this work, a very high, locally applied electric field was used to induce whisker nucleation on an Sn film. The field was generated by using a conductive AFM tip and applying a voltage bias between the sample and the conductive cantilever. The tip-sample separation distance was thus controllable, and any dielectric breakdown could be avoided. At locations where the AFM tip was positioned for an extended period, minuscule whiskers were observed, whose growth direction matched vertical orientation of the field.

Keywords

Snnucleation & ampgrowthatom probe microscopyelectronic material
Type
Articles
Information
MRS Advances , Volume 3 , Issue 57-58: Electronic and Photonic Materials , 2018 , pp. 3367 - 3372
Copyright
Copyright © Materials Research Society 2018 

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References

REFERENCES

“NASA Goddard Space Flight Center tin whisker homepage,” Available at http://nepp.nasa.gov/whisker/failures/index.htm for more information; accessed 04 Nov 2015. [Online].Google Scholar
Brusse, J., “Tin Whisker Observations on Pure Tin-Plated Ceramic Chip Capacitors,” in Proceedings of the American Electroplaters and Surface Finishers (AESF) SUR/FIN Conference, 2002, pp. 45–61.Google Scholar
Karpov, V. G., Phys. Rev. Appl., vol. 1, no. 4, p. 44001, May 2014.CrossRefGoogle Scholar
Niraula, D. and Karpov, V. G., J. Appl. Phys., vol. 118, no. 20, p. 205301, Nov. 2015.CrossRefGoogle Scholar
Killefer, M. et al. , J. Phys. D. Appl. Phys., vol. 50, no. 40, p. 405302, 2017.CrossRefGoogle Scholar
Vasko, A. C., Warrell, G. R., Parsai, E. I., Karpov, V. G., and Shvydka, D., J. Appl. Phys., vol. 118, no. 12, p. 125301, Sep. 2015.CrossRefGoogle Scholar
Borra, V., Georgiev, D. G., and Karpov, V. G., MRS Adv., vol. 1, no. 12, pp. 805–810, Feb. 2016.CrossRefGoogle Scholar
Niraula, D., McCulloch, J., Warrell, G. R., Irving, R., Karpov, V. G., and Shvydka, D., AIP Adv., vol. 6, no. 7, p. 75201, Jul. 2016.CrossRefGoogle Scholar
Borra, V., Georgiev, D. G., and Grice, C. R., Thin Solid Films, vol. 616, pp. 311–315, Oct. 2016.CrossRefGoogle Scholar
Vasko, A. C., Grice, C. R., Kostic, A. D., and Karpov, V. G., MRS Commun., vol. 5, no. 4, pp. 619–622, Dec. 2015.CrossRefGoogle Scholar
Liu, M. et al. , Nature, vol. 537, no. 7620, pp. 382–386, Aug. 2016.CrossRefGoogle Scholar