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Modified Linear Transmission Line Model Test Structure forDetermining Specific Contact Resistance

Published online by Cambridge University Press:  01 February 2016

G.K. Reeves ,
Y. Pan ,
P.W. Leech  and
A.S. Holland
G.K. Reeves
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria, 3001, Australia
Y. Pan
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria, 3001, Australia
P.W. Leech*
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria, 3001, Australia
A.S. Holland
Affiliation:
School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, Victoria, 3001, Australia
*
*(Email: Patrick.Leech@rmit.edu.au)
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Abstract

A modified design of the transmission line model test structure uses the simplecalculation of specific contact resistance, ρc, based on atwo contact linear pattern but without the requirement of a mesa etch. Thismodified structure uses a linear TLM with semicircular terminations at each end.The function of the semicircular terminations is to confine the fringing fieldsat the ends of the linear TLM contacts. Simple analytical equations fordetermining ρc have been developed on the basis of themodified linear TLM pattern. These calculations have shown good agreement with afinite element model (FEM) of the modified TLM test structure using typicalparameters for metal/ SiC contacts.

Keywords

electronic materialelectrical propertieselectronic structure
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 157 - 162
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Reeves, G. K. and Harrison, H. B., IEEE Electron Device Lett 3(5), 111 (1982).Google Scholar
Reeves, G. K., Solid-State Electronics, 23(5), 487, (1980).Google Scholar
Oussalah, S., Djezzar, B., Jerisian, R., Solid-State Electronics 49, 1617 (2005).Google Scholar
Klootwijk, J.H. and Timmering, C.E., IEEE Int Conference on Microelectronic Test Structures 17, 247 (2004).Google Scholar
Laariedh, F., Lazar, M., Cremillieu, P., Penuelas, J., Leclercq, J-L and Planson, D., Semiconductor Science and Technology 28(4) 045007 (2013).Google Scholar
Liu, J., Li, C., Zhu, R., Wang, J and Feng, Z., International Journal of Minerals, Metallurgy and Materials 20(8) 802 (2013).Google Scholar
Takamatsu, S., Nomura, I., Shiraishi, T., Kishino, K., J. Cryst. Growth 425, 199 (2015).Google Scholar
Cayrel, F., Me´nard, O., Yvon, A., Thierry-Je´bali, N., Brylinsky, C., Collard, E. and Alquier, D., Phys. Status Solidi A 209(6), 1059 (2012).Google Scholar
Holland, A. S., Reeves, G. K., Bhaskaran, M., and Sriram, S., IEEE Trans. Electron Dev. 56(10), 2250 (2009).CrossRefGoogle Scholar
Berger, H. H., “Contact resistance on diffused resistors,” in Proc. IEEE International Solid-State Circuits Conference, 4, 160 (1969).Google Scholar
Holland, A. S., Reeves, G. K., and Harrison, H. B., in Proc. IEEE Int. Conf. Microelectron. Test Structures, 10, 95 (1997).12.Google Scholar