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MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications

Published online by Cambridge University Press:  07 February 2020

Annika Grundmann ,
Clifford McAleese ,
Ben Richard Conran ,
Andrew Pakes ,
Dominik Andrzejewski ,
Tilmar Kümmell ,
Gerd Bacher ,
Kenneth Boh Khin Teo ,
Michael Heuken  and
Holger Kalisch
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Annika Grundmann*
Affiliation:
Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany
Clifford McAleese
Affiliation:
AIXTRON Ltd., Anderson Road, Swavesey, Cambridge CB24 4FQ, United Kingdom
Ben Richard Conran
Affiliation:
AIXTRON Ltd., Anderson Road, Swavesey, Cambridge CB24 4FQ, United Kingdom
Andrew Pakes
Affiliation:
AIXTRON Ltd., Anderson Road, Swavesey, Cambridge CB24 4FQ, United Kingdom
Dominik Andrzejewski
Affiliation:
Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg, Germany
Tilmar Kümmell
Affiliation:
Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg, Germany
Gerd Bacher
Affiliation:
Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg, Germany
Kenneth Boh Khin Teo
Affiliation:
AIXTRON Ltd., Anderson Road, Swavesey, Cambridge CB24 4FQ, United Kingdom
Michael Heuken
Affiliation:
Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany
Holger Kalisch
Affiliation:
Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany
Andrei Vescan
Affiliation:
Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany
*
*(Email: grundmann@cst.rwth-aachen.de)
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Abstract

Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.

Keywords

2D materialsmetalorganic depositionheterostructurevapor phase epitaxy (VPE)
Type
Articles
Information
MRS Advances , Volume 5 , Issue 31-32: Fabrication of Functional Materials and Nanomaterials , 2020 , pp. 1625 - 1633
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Copyright
Copyright © Materials Research Society 2020

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References

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