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Multiple Metamaterial Pattern Integration for Polarization Selective Photodetector Applications

Published online by Cambridge University Press:  11 January 2018

Corey Shemelya ,
Nicole A. Pfiester ,
Dante DeMeo ,
Thomas Rotter ,
Ganesh Balakrishnan  and
Thomas E. Vandervelde
Corey Shemelya
Affiliation:
Electrical and Computer Engineering Department, Tufts University, 161 College Ave. Medford MA, 02155, U.S.A. Electrical and Computer Engineering Department, The Technical University of Kaiserslautern, Erwin-Schrödinger-Straβe 1, 67663 Kaiserslautern, Germany
Nicole A. Pfiester
Affiliation:
Electrical and Computer Engineering Department, Tufts University, 161 College Ave. Medford MA, 02155, U.S.A.
Dante DeMeo
Affiliation:
Electrical and Computer Engineering Department, Tufts University, 161 College Ave. Medford MA, 02155, U.S.A.
Thomas Rotter
Affiliation:
Electrical and Computer Engineering Department, The University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, U.S.A.
Ganesh Balakrishnan
Affiliation:
Electrical and Computer Engineering Department, The University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106, U.S.A.
Thomas E. Vandervelde*
Affiliation:
Electrical and Computer Engineering Department, Tufts University, 161 College Ave. Medford MA, 02155, U.S.A.
*
*tvanderv@ece.tufts.edu
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Abstract

Interest in active metamaterial (MM) devices has recently increased due to their potential for tunable, switchable, and scalable optical responses. More specifically, a dynamic, on-chip MM polarizer has applications ranging from material characterization to sensing without the need for cumbersome external filters. This work demonstrates efforts to optimize MM devices for dynamic polarization filtering by combining elements from split-ring resonators, wire-pairs, and fishnet patterns. The polarization grid has been designed to operate under an applied voltage with simulated on/off ratios of 75% and dynamic polarization selectivity of 70%. Samples have been fabricated using epitaxial GaAs on sapphire with various n-type doping concentrations to approximate electrical tuning.

Keywords

nanostructureoptical propertiessemiconducting
Type
Articles
Information
MRS Advances , Volume 3 , Issue 33: Electronics, Magnetics and Photonics , 2018 , pp. 1907 - 1912
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Copyright
Copyright © Materials Research Society 2018 

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References

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