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Performance of Anisotropically Conductive Adhesive Attachments on Adhesiveless Polyimide Substrate during High-Temperature Storage Tests

Published online by Cambridge University Press:  13 June 2016

Sanna Lahokallio  and
Laura Frisk
Sanna Lahokallio*
Affiliation:
Tampere University of Technology, Department of Electrical Engineering P.O. Box 692, 33101 Tampere, Finland
Laura Frisk
Affiliation:
Tampere University of Technology, Department of Electrical Engineering P.O. Box 692, 33101 Tampere, Finland
*
*(Email: sanna.lahokallio@tut.fi)
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Abstract

The high-temperature performance of electronics packages was studied at 180°C, 200°C and 240°C for 3,000h. The structure tested consisted of a fairly large silicon chip attached with anisotropic conductive adhesive (ACA) onto an adhesiveless PI substrate. These structures showed good electrical reliability at 180°C. Several early failures were seen at the other temperatures. However, only 23% of the test samples failed at 200°C, while considerably more failures were seen at 240°C. The results showed that good high-temperature reliability can be achieved with polymer interconnections. However, the exposure time should be limited, especially at very high temperatures, to avoid failures caused by the materials becoming brittle.

Keywords

electronic structureadhesivethermal stresses
Type
Articles
Information
MRS Advances , Volume 1 , Issue 51: Electronics and Photonics , 2016 , pp. 3459 - 3464
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Committee on Material for High-Temperature Semiconductor devices; Commission on Engineering and Technical Systems; National Research Council, Materials for High-Temperature Semiconductor Devices, (The National Academic Press, Washington DC, 1995), pp. 51–63.Google Scholar
Jullien, J.B., Frémont, H. and Deletage, H., Microelectron. Reliab. 53, 1597 (2013).CrossRefGoogle Scholar
Pecht, M.G. et al. Electronic Packaging Materials and Their Properties, (CRC Press LLC, USA, 1999) pp. 11–12.Google Scholar
Bechtold, F.A., (European Microelectronics and Packaging Conference Proc., Rimini, Italy, 2006) pp. 1–12.Google Scholar
Li, Y., Wong, C.P., Mater. Sci. Eng. Rep. 51, 1 (2006)Google Scholar
Lahokallio, S., Hoikkanen, M., Vuorinen, J. and Frisk, L., Materials 8, 8641 (2015).Google Scholar
Lahokallio, S., Hoikkanen, M., Marttila, T., Vuorinen, J., Kiilunen, J. and Frisk, L., J. Electron. Mater. 45, 1184 (2016).Google Scholar
Lahokallio, S., Kiilunen, J. and Frisk, L., Microelectron. Reliab. 54, 2017 (2014).Google Scholar
Lai, Z., Liu, J., IEEE Trans. Comp. Pack. Manuf. Tech. B. 19, 644 (1996).Google Scholar
Lu, D., Wong, C.P., Materials for Advanced Packaging, (Springer Science + Business Media, New York, 2009) pp. 365–405.CrossRefGoogle Scholar
Ohring, M., Reliability and Failure of Electronic Materials and Devices, (Academic Press, USA, 1998) pp. 13–35.Google Scholar