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Rectifying Behavior and Light Emission from Nickel Oxide MIS Structures

Published online by Cambridge University Press:  09 September 2016

Kamruzzaman Khan ,
Srikanth Itapu  and
Daniel G. Georgiev
Kamruzzaman Khan*
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, U.S.A.
Srikanth Itapu
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, U.S.A.
Daniel G. Georgiev
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, U.S.A.
*
*(Email: Kamruzzaman.Khan@rockets.utoledo.edu)
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Abstract

We have demonstrated the NiO/ZnO based rectifying diode for LED application for substituting GaN for optoelectronics applications. We have systematically studied the current-voltage (I-V) characteristics of NiO based Metal-Insulator-Semiconductor (MIS) devices under forward and reverse bias for its use in LED applications. The results obtained show that the current increases exponentially with the voltage after a critical turn-on-voltage. The mechanism of carrier transport responsible for the rectifying behavior of the MIS structure as well as the light emission is discussed in relation to the experimental results.

Keywords

optoelectronicoxideluminescence
Type
Articles
Information
MRS Advances , Volume 1 , Issue 49: Electronics and Photonics , 2016 , pp. 3341 - 3347
Copyright
Copyright © Materials Research Society 2016 

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References

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