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Study and optimization of the photoluminescence of amorphous silicon carbide thin films
Published online by Cambridge University Press: 16 January 2019
Abstract:
In this work we report the study of the effect of the deposition parameters on the photoluminescence (PL) intensity of hydrogenated amorphous silicon-carbide (a-SiC:H) films deposited at very low temperature (150 °C) by Plasma Enhanced Chemical Vapor Deposition (PECVD). We have observed that the main deposition parameter that influences the wavelength emission peak is the methane/silane (CH4/SiH4) ratio used for the films deposition, due to a change on the film carbon content. On the other hand the deposition RF power affects the PL intensity, without a change in the PL emission peak. Also we have studied the effect of the film thickness on the PL intensity and we have observed an optimal film thickness.
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- MRS Advances , Volume 3 , Issue 64: International Materials Research Congress XXVII , 2018 , pp. 3905 - 3916
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- Copyright © Materials Research Society 2019
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