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Surface Smoothing Effects of Materials Used in Underlayer of MTJ withGas Cluster Ion Beams

Published online by Cambridge University Press:  01 February 2016

Noriaki Toyoda
Noriaki Toyoda*
Affiliation:
Graduate school of engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, JAPAN.
*
*(Email: ntoyoda@incub.u-hyogo.ac.jp)
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Abstract

Surface smoothing of Ru used as underlayer of magnetic tunneling junctions (MTJ)in magneto-resistive random access memory (MRAM) was carried out with gascluster ion beam (GCIB) in order to improve device characteristics. For Rufilms, surface smoothing with 5 kV N2-GCIB irradiation was effective,and CoFe films deposited on smoothed Ru surface also showed smooth surface. Fromthe hysteresis loop measurements of MTJ formed on smoothed Ru withN2-GCIB, it showed improvement of inter-layer coupling magnetic field(Hin) with decreasing the surface roughness of underlayer Ru. Itis expected that surface roughness of MgO in MTJ was also improved by smoothingof underlayer Ru with N2-GCIB.

Keywords

ion-beam processingmagnetoresistance (magnetic)Ru
Type
Articles
Information
MRS Advances , Volume 1 , Issue 5: Electronics and Photonics , 2016 , pp. 357 - 362
Copyright
Copyright © Materials Research Society 2016 

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References

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