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Tunable Photoluminescence of Atomically Thin MoS2 via Nb Doping

Published online by Cambridge University Press:  16 January 2019

Gourav Bhowmik ,
Katherine Gruenewald ,
Girish Malladi ,
Tyler Mowll ,
Carl Ventrice Jr.  and
Mengbing Huang
Gourav Bhowmik*
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, NY12203, U.S.A. Ion Beam Laboratory, University at Albany, SUNY, 1400 Washington Ave, Albany, NY12222, U.S.A.
Katherine Gruenewald
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, NY12203, U.S.A.
Girish Malladi
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, NY12203, U.S.A.
Tyler Mowll
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, NY12203, U.S.A.
Carl Ventrice Jr.
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, NY12203, U.S.A.
Mengbing Huang
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 257 Fuller Road, Albany, NY12203, U.S.A.
*
*(Email: gouravbhowmik21@gmail.com)
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Abstract

The emergence of 2D materials has led to increased attention on correlating the structural, optical, and optoelectronic properties of atomically thin transition metal chalcogenides like MoS2. We demonstrate the tunability of the photoluminescence (PL) properties of bulk MoS2 via implantation of Nb ions. Raman spectroscopy is used to confirm the p-type doping. The PL intensity of MoS2 is drastically enhanced by the adsorption of p-type dopants. X-ray photoelectron spectroscopy (XPS) is used to study the change of MoS2 structure post-implantation. Our results provide a new route for modulating the optical properties of two-dimensional semiconductors. The strong and stable PL from defect sites of MoS2 created by Nb ion implantation may have promising applications in optoelectronic devices.

Keywords

2D materialsion-implantationNbRaman spectroscopyx-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Advances , Volume 4 , Issue 10: Electronic, Photonic and Magnetic Materials , 2019 , pp. 609 - 614
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Copyright
Copyright © Materials Research Society 2019 

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