Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-29T12:36:32.308Z Has data issue: false hasContentIssue false
  • English
  • Français

Understanding gaas Native Oxides By Correlating Three Liquid Contact Angle Analysis (3LCAA) and High Resolution Ion Beam Analysis (HR-IBA) to X-Ray Photoelectron Spectroscopy (XPS) as Function of Surface Processing

Published online by Cambridge University Press:  05 August 2019

Sukesh Ram ,
Amber A. Chow ,
Shaurya Khanna ,
Nikhil C. Suresh ,
Franscesca J. Ark ,
Saaketh R. Narayan ,
Aashi R. Gurijala ,
Jack M. Day ,
Timothy Karcher  and
Robert J. Culbertson
...Show all authors
Sukesh Ram*
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ AccuAngle Analytics LLC, AZ
Amber A. Chow
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ
Shaurya Khanna
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ
Nikhil C. Suresh
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ AccuAngle Analytics LLC, AZ
Franscesca J. Ark
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ
Saaketh R. Narayan
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ AccuAngle Analytics LLC, AZ
Aashi R. Gurijala
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ
Jack M. Day
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ AccuAngle Analytics LLC, AZ
Timothy Karcher
Affiliation:
Arizona State University, Department of Physics Eyring Materials Center (EMC), Arizona State University
Robert J. Culbertson
Affiliation:
Arizona State University, Department of Physics
Shawn D. Whaley
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ
Karen L. Kavanagh
Affiliation:
Simon Fraser University, Department of Physics
Nicole Herbots
Affiliation:
Arizona State University, Department of Physics SiO2 Innovates LLC, AZ AccuAngle Analytics LLC, AZ
*
*(Email: sram6@asu.edu)
Get access

Abstract

Chemical bonding in native oxides of GaAs, before and after etching, is detected by X-Ray Photoelectron Spectroscopy (XPS). It is correlated with surface energy engineering (SEE), measured via Three Liquid Contact Angle Analysis (3LCAA), and oxygen coverage, measured by High Resolution Ion Beam Analysis (HR-IBA).

Before etching, GaAs native oxides are found to be hydrophobic with an average surface energy, γT, of 33 ± 1 mJ/m2, as measured by 3LCAA. After dilute NH4OH etching, GaAs becomes highly hydrophilic and its surface energy, γT, increases by a factor 2 to a reproducible value of 66 ± 1 mJ/m2. Using HR-IBA, oxygen coverage on GaAs is found to decrease from 7.2 ± 0.5 monolayers (ML) to 3.6 ± 0.5 ML. The 1.17 ratio of Ga to As, measured by HR-IBA, remains constant after etching.

XPS is used to measure oxidation of Ga and As, as well as surface stoichiometry on two locations of several GaAs(100) wafers before and after etching. The relative proportions of Ga and As are unaffected by adventitious carbon contamination. The 1.16 Ga:As ratio, measured by XPS, matches HR-IBA analysis. The proportions of oxidized Ga and As do not change significantly after etching. However, the initial ratio of As2O5 to As2O3, within the oxidized As, significantly decreases after etching from approximately 3:1 to 3:2.

Absolute oxygen coverage, as a function of surface processing, is determined within 0.5 ML by HR-IBA. XPS offers insight into these modifications by detecting electronic states and phase composition changes of GaAs oxides. The changes in surface chemistry are correlated to changes in hydro-affinity and surface energies measured by 3LCAA.

Keywords

surface chemistryoxidationx-ray photoelectron spectroscopy (XPS)Rutherford Backscattering (RBS)III-V
Type
Articles
Information
MRS Advances , Volume 4 , Issue 41-42: Electronics and Photonics , 2019 , pp. 2249 - 2263
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Leng, Y. X. et al. , IEEE Conference Record - Abstracts. 2002 IEEE International Conference on Plasma Science (Cat. No.02CH37340), Banff, Alberta, Canada, 2002, pp. 308Google Scholar
Morita, M., Ohmi, T., Hasegawa, E., Kawakami, M., Ohwada, M.., Journal of Applied Physics. 68, 1272 (1990).CrossRefGoogle Scholar
Helms, CR. In: Balk P, editor. The Si-SiO2 system. Amsterdam, Oxford, New York, Tokyo: Elsevier, (1988).Google Scholar
Lewis, E.A. and Irene, E.A., J. Vac. Sci. Technol., 4, 916 (1986).CrossRefGoogle Scholar
Deal, B. E.; Grove, A. S., Journal of Applied Physics. 36 (12): 3770–3778 (1965).CrossRefGoogle Scholar
Mizokawa, O. Komoda, and Miyase, S., Thin Solid Films 156, 127 (1988).CrossRefGoogle Scholar
Schwartz, G. P., Gualtieri, G. J., Kammiott, G. W., and Schwartz, B., J. Electrochem. Soc. 126,1737 (1979).CrossRefGoogle Scholar
Vancauwenberghe, O., Herbots, N., Manoharan, H., Ahrens, M., J. Vac. Sci. Technol. 9(3), P. 1035 (1991).CrossRefGoogle Scholar
"New South Innovations News - UNSW breaks solar cell record". NewSouth Innovations. 2008-11-18. Archived from the original on April 25, 2012. Retrieved 2018-06-23.Google Scholar
Frank, D., et al. , IEEE Journal of Photovoltaics. 6: 343–349. (2016).Google Scholar
Khan, I. M., et al. , Optoelectronics and Advanced Materials-Rapid Communications. 9(1):107-109 (2014).Google Scholar
Herbots, N., Shaw, J., Hurst, Q., Grams, M., Culbertson, R., Smith, D. J., Atluri, V., Zimmerman, P., and Queeney, K., Matls. Sci. Eng. B 87, 303 (2001).CrossRefGoogle Scholar
Queeney, K. T., Herbots, N., Shaw, J. M., Atluri, V., and Chabal, Y. J., Appl. Physics Letters 84, 493 (2004).CrossRefGoogle Scholar
Shaw, Justin M., Herbots, N., Hurst, Q. B., Bradley, D., Culbertson, R. J., Atluri, V., and Queeney, K. T., Journal of Applied Physics 100, 104109 (2006).CrossRefGoogle Scholar
Herbots, N., Xing, Q., Hart, M., Bradley, J. D., Sell, D. A., Culbertson, R. J., & Wilkens, B. J. Nucl. Instr. and Meth. in Physics Research, Section B: 272, 330-333 (2012).CrossRefGoogle Scholar
Herbots, N., Atluri, V. P., Bradley, J. D., Swati, B., Hurst, Q. B., and Xiang, J., U.S. Patent N° 6,613,677 (Granted September 2, 2003).Google Scholar
Herbots, N, Bradley, J.D., Shaw, J.M., Culbertson, R J., Atluri, V. US Patent N° 7,851,365 (14 December 14, 2010).Google Scholar
Kern, W., J. Electrochem. Soc. 137, 1887 (1990).CrossRefGoogle Scholar
Kern, W., RCA Rev. 31, 187 (1970).Google Scholar
Herbots, N., Culbertson, R. J., Bradley, J. D., Hart, M. A., Sell, David A., Whaley, Shawn D., US Patent N° 9,018,077 (28 April 2015)Google Scholar
Herbots, N, Whaley, S. D., Culbertson, R.J., Bennett-Kennett, R., M Murphy, A., Bade, M. T., Farmer, S., Watson, C. F., Acharya, A., US Patent N° 9,589,801 (7 March 2017).Google Scholar
Bennett-Kennett, R., Wet: Catalyzing Molecular Cross-Bridges and Interphases Between Nanoscopically Smoothed Si-Based Surfaces And Tailoring Surface Energy Components, Senior Thesis, Arizona State University, Dept. of Physics (2013).Google Scholar
Davis, E. W., Wet NanobondingTM Of Semiconducting Surfaces Optimized Via Surface Energy Modification Using Three Liquid Contact Angle Analysis as A Metrology, Senior Thesis Arizona State University, Dept. of Physics (2016).Google Scholar
Whaley, S. D., Nano-Bonding of Silicon Oxides-based surfaces at Low Temperature: Bonding Interphase Modeling via Molecular Dynamics and Characterization of Bonding Surfaces Topography, Hydro-affinity and Free Energy (Arizona State University, Physics, PhD Doctoral Dissertation, 2011).Google Scholar
Cornejo, C. E., Bertram, M. E., Diaz, T. C., Narayan, S. R., Ram, S., Kavanagh, K. L., Herbots, N., Day, J. M., Ark, F. J., Dhamdhere, A., Culbertson, R. J. and Islam, R.. MRS Advances, 3(57-58), 3403-3411 (2018).CrossRefGoogle Scholar
Narayan, S., Day, J., Thinakaran, H., Herbots, N., Bertram, M., Cornejo, C., Diaz, T., Kavanagh, K., Culbertson, R. J., Ark, F., Ram, S., Mangus, M., Islam, R.. MRS Advances, 3(57-58), 3379-3390 (2018).CrossRefGoogle Scholar
Oss, C. J. V., Chaudhury, M. K., and Good, R. J., Chemical Reviews 88, 927 (1988).Google Scholar
Faibish, R., Yoshida, W., and Cohen, Y., J. of Colloid and Interface Sci., Vol. 256, Issue 2, p. 341 (2002)CrossRefGoogle Scholar
Carre, A., J. Adhesion Sci. Technol., 21 (10), 961-981 (2007).CrossRefGoogle Scholar
Mayer, M., American Inst. Phys. Conf. Proceedings 475, p. 541 (1999).Google Scholar
CasaXPS Manual 2.3.15 Introduction to XPS and AES, Casa Software Ltd (2009).Google Scholar
Characterization of Oxidized GaAs Wafers by XPS, Evans Analytical Group, LLC (2007).Google Scholar
Engelhard, M. H., et al. , Surface Science Spectra 23, 83 (2016).CrossRefGoogle Scholar
Helsen, L., Van den Bulck, E., Van Bael, M.K., Vanhoyland, G., Mullens, J., Thermo. Acta 414.145–153. (2004).CrossRefGoogle Scholar
Rebaud, M., Roure, M.C. Loup, V., Rodriguez, Ph., Martinez, E., Besson, P., Electrochem Soc. Transactions, 69 (8) 243-250 (2015)Google Scholar