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Isotopically Controlled Semiconductors

Published online by Cambridge University Press:  31 January 2011

Eugene E. Haller
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Abstract

The following article is an edited transcript based on the David Turnbull Lecture given by Eugene E. Haller (University of California, Berkeley) at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his “pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations.”

The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies of isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin–film heterostructures. Isotopic composition affects several properties, such as phonon energies, band structure, and lattice constant, in subtle, yet—for their physical understanding–significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photo-luminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for studies of simultaneous self-and dopant-diffusion. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem, in which moving atoms go in random directions at random intervals. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

Keywords

diffusiondopantGesemiconductorSispintronicthermal conductivity
Type
Research Article
Information
MRS Bulletin , Volume 31 , Issue 7: Materials Science of Supported Lipid Membranes , July 2006 , pp. 547 - 553
Copyright
Copyright © Materials Research Society 2006

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References

1Olander, D., Sci. Am. 239 (8) (1978) p. 37.CrossRefGoogle Scholar
2Ladd, T.D., Goldman, J.R., Yamaguchi, F., Yamamoto, Y., Abe, E., and Itoh, K.M., Phys. Rev. Lett. 89 017901 (2002).CrossRefGoogle Scholar
3Itoh, K., Hansen, W.L., Haller, E.E., Farmer, J.W., Ozhogin, V.I., Rudnev, A.I., and Tikhomirov, A.I., J. Mater. Res. 8 (1993) p. 1341.CrossRefGoogle Scholar
4Ager, J.W. III, Beeman, J.W., Hansen, W.L., Haller, E.E., Sharp, I.D., Liao, C., Yang, A., Thewalt, M.W.L., and Riemann, H., JECS 152 (6) (2005) p. G448.Google Scholar
5Geballe, T.H. and Hull, G.W., Phys. Rev. 110 (1958) p. 773.CrossRefGoogle Scholar
6Ozhogin, V.I., Inyushkin, A.V., Taldenkov, A.N., Tikhomirov, A.V., Popov, G.E., Haller, E., and Itoh, K., Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki 63 (6) (1996) p. 463; Engl. translation: JETP Lett. 63 (6) (1996) p. 490.Google Scholar
7Wei, L.-H., Guo, P.K., Thomas, R.L., Anthony, T.R., and Banholzer, W.F., Phys. Rev. Lett. 70 (1993) p. 3764.CrossRefGoogle Scholar
8Nilsson, G. and Nelin, G., Phys. Rev. B 3 (1971) p. 364.CrossRefGoogle Scholar
9Fuchs, H.D., Grein, C.H., Cardona, M., Hansen, W.L., Itoh, K., and Haller, E.E., Solid State Commun. 82 (1992) p. 225.CrossRefGoogle Scholar
10Spitzer, J., Ruf, T., Cardona, M., Dondl, W., Schorer, R., Abstreiter, G., and Haller, E.E., Phys. Rev. Lett. 72 (10) (1994) p. 1565.CrossRefGoogle Scholar
11Eaglesham, D.J., Stolk, P.A., Grossman, H.-J., and Poate, J.M., Appl. Phys. Lett. 65 (18) (1994) p. 2305.CrossRefGoogle Scholar
12Bracht, H., Haller, E.E., and Clark-Phelps, R., Phys. Rev. Lett. 81 (2) (1998) p. 393.CrossRefGoogle Scholar
13Wang, Lei, Hsu, Leon, Haller, E.E., Erickson, Jon W., Fischer, A., Eberl, K., and Cardona, M., Phys. Rev. Lett. 76 (13) (1996) p. 2342.CrossRefGoogle Scholar
14Bracht, H., Nicols, S.P., Walukiewicz, W., Silvera, J.P., Briones, F., and Haller, E.E., Nature 408 (2000) p. 69.CrossRefGoogle Scholar
15Mayur, A.J., Sciacca, M.D., Udo, M.K., Ramdas, A.K., Itoh, K., Wolk, J., and Haller, E.E., Phys. Rev. B 49 (1994) p. 16293.CrossRefGoogle Scholar