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Piezotronic materials and large-scale piezotronics array devices

Published online by Cambridge University Press:  10 December 2018

Weiguo Hu ,
Kourosh Kalantar-Zadeh ,
Kapil Gupta  and
Chuan-Pu Liu
Weiguo Hu
Affiliation:
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, China; huweiguo@binn.cas.cn
Kourosh Kalantar-Zadeh
Affiliation:
School of Chemical Engineering, University of New South Wales, Australia; k.kalantar-zadeh@unsw.edu.au
Kapil Gupta
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Taiwan; kapilmsrc@gmail.com
Chuan-Pu Liu
Affiliation:
Department of Materials Science and Engineering, National Cheng Kung University, Taiwan; cpliu@mail.ncku.edu.tw
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Abstract

Third-generation semiconductors, such as ZnO and GaN, exhibit strong piezoelectric polarization due to the lack of inversion symmetry. The piezotronic effect observed in these semiconductors was proposed for tuning carrier transport in electronic devices by utilizing the induced piezoelectric potential as a virtual gate. This novel concept allows effective interactions between micro-/nanoelectronic devices and external mechanical stimuli. Piezotronics provide a promising approach for designing future electronic devices beyond Moore’s Law with potential for developing smart sensors, environment monitoring systems, human–machine interaction elements, and other transducers. In this article, we review recent progress in piezotronics using one-dimensional materials, heterojunctions, and large-scale arrays. We provide guidance for future piezotronic devices based on these materials.

Keywords

nanostructurepiezoelectricsemiconductingsensormicroelectromechanical (MEMS)
Type
Piezotronics and Piezo-Phototronics
Information
MRS Bulletin , Volume 43 , Issue 12: Piezotronics and Piezo-Phototronics , December 2018 , pp. 936 - 940
Copyright
Copyright © Materials Research Society 2018 

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