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Pulsed-laser hyperdoping and surface texturing for photovoltaics

Published online by Cambridge University Press:  10 June 2011

Meng-Ju Sher ,
Mark T. Winkler  and
Eric Mazur
Meng-Ju Sher
Affiliation:
Harvard University, Cambridge, MA 02138, USA; sher@physics.harvard.edu
Mark T. Winkler
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA; mwinkler@mit.edu
Eric Mazur
Affiliation:
Harvard University, Cambridge, MA 02138, USA; mazur@physics.harvard.edu
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Abstract

We describe two ways in which pulsed lasers can be used to increase efficiency in photovoltaic devices. First, pulsed-laser hyperdoping can introduce dopants into a semiconductor at non-equilibrium concentrations, which creates an intermediate band in the bandgap of the material and modifies the absorption coefficient. Second, pulsed-laser irradiation can enhance geometric light trapping by increasing surface roughness. Hyperdoping in silicon enables absorption of photons to wavelengths of at least 2.5 μm, while texturing enhances the absorptance to near unity at all absorbing wavelengths. This article reviews both effects and comments on outstanding questions and challenges in applying each to increasing the efficiency of photovoltaic devices.

Keywords

Photovoltaicrapid solidificationmicrostructureelectronic structuremetal-insulator transition
Type
Research Article
Information
MRS Bulletin , Volume 36 , Issue 6: Photon management for photovoltaics , June 2011 , pp. 439 - 445
Copyright
Copyright © Materials Research Society 2011

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