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The Semiconductor p–n Junction “Ultimate Lamp”

Published online by Cambridge University Press:  31 January 2011

Nick Holonyak Jr.
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Abstract

Simple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.

Keywords

p–n junctionsLEDslight-emitting diodes
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 7 , July 2005 , pp. 515 - 517
Copyright
Copyright © Materials Research Society 2005

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References

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5.Wolfe, C.M., Holonyak, N. Jr., and Stillman, G.E., Physical Properties of Semiconductors (Prentice Hall, Englewood Cliffs, N.J., 1989)Google Scholar