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Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices

Published online by Cambridge University Press:  31 January 2011

J. J. Sumakeris ,
J. R. Jenny  and
A. R. Powell
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Abstract

We discuss continuing materials technology improvements that have transformed silicon carbide from an intriguing laboratory material into a premier manufacturable semiconductor technology. This advancement is demonstrated by reduced micropipe densities as low as 0.22 cm−2 on 3-in.-diameter conductive wafers and 16 cm−2 on 100-mm-diameter conductive wafers. For high-purity semi-insulating materials, we confirm that the carbon vacancy is the dominant deep-level trapping state, and we report very consistent cross-wafer activation energies derived from temperature-dependent resistivity.Warm-wall and hot-wall SiC epitaxy platforms are discussed in terms of capability and applications. Specific procedures that essentially eliminate forward-voltage drift in bipolar SiC devices are presented in detail.

Keywords

carbon vacancydefect reductionepitaxyforward voltagehigh-puritysemi-insulating materialsHPSImicropipe closureShockley basal plane dislocationssilicon carbide
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 280 - 286
Copyright
Copyright © Materials Research Society 2005

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References

1. Cree Inc. Home Page, www.cree.com (accessed February 2005).Google Scholar
2. Infineon Technologies AG Home Page, www.infineon.com (accessed February 2005).Google Scholar
3.Das, M.K., Sumakeris, J.J., Paisley, M.J., and Powell, A., Mater. Sci. Forum 457–460 (2004) p. 1105.Google Scholar
4.Sumakeris, J.J., Das, M.K., Hobgood, H.McD., Mueller, S.G., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W., and Carter, C.H. Jr., Mater. Sci. Forum 457–460 (2004) p. 1113.Google Scholar
5.Sumakeris, J.J., U.S. patent application serial no. 008042 (filed September 22, 2003).Google Scholar
6.Tsvetkov, V.F., Allen, S.T., Kong, H.S., and Carter, C.H. Jr., Inst. Phys. Conf. Ser. No. 142 (IOP, Bristol, UK, 1996) p. 17.Google Scholar
7.Lely, J.A., Ber. Dt. Keram. Ges. 32 (1955) p. 299.Google Scholar
8.Tairov, Yu. M. and Tsevtkov, V.F., J. Cryst. Growth 43 (1978) p. 209.Google Scholar
9.Tsvetkov, V.F., Allen, S.T., Kong, H.S., and Carter, C.H. Jr., Inst. Phys. Conf. Ser. No. 142 (IOP, Bristol, UK, 1996) p. 17.Google Scholar
10.Stein, R.A. and Lanig, P., Mater. Sci. Eng. B 11 (1992) p. 69.Google Scholar
11.Barrett, D.L., McHugh, J.P., Hobgood, H.M., Hopkins, R.H., McMullin, P.G., Clarke, R.C., and Choyke, W.J., J. Cryst. Growth 128 (1993).Google Scholar
12.Powell, A.R., Leonard, R.T., Brady, M.F., St.Müller, G., Tsvetkov, V.F., Hobgood, H.McD., Burk, A.A., Glass, R.C., and Carter, C.H. Jr., Mater. Sci. Forum 457–460 (2004) p. 41.Google Scholar
13. Novasic exhibit, International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003), Lyon, France.Google Scholar
14.Huang, X.R., Dudley, M., Vetter, W.M., Huang, W., Si, W., and Carter, C.H. Jr., J. Appl. Crystallog. 32 (1999) p. 516.Google Scholar
15.Rupp, R., Treu, M., Turkes, P., Beerman, H., Scherg, T., Preis, H., and Cerva, H., Mater. Sci. Forum 483–485 (2005) p. 925.Google Scholar
16.Tsuhida, H., Kamata, I., Jikimoto, T., Miyangi, T., and Izumi, K.., Mater. Sci. Forum 433–336 (2003) p. 131.Google Scholar
17.Neudeck, P.G., Mater. Sci. Forum 338–342 (2000) p.1161.Google Scholar
18.Zhang, X., Ha, S., Benamara, M., O'Loughlin, M.J., Sumakeris, J.J., and Skowronski, M., Appl. Phys. Lett. 85 (2004) p. 5209.Google Scholar
19.Lendenmann, H., Dahlquist, F., Johansson, N., Söderholm, R., Nilsson, P.A., Bergman, J.P., and Skytt, P., Mater. Sci. Forum 353–356 (2001) p. 727.Google Scholar
20.Nakamura, D., Gunjishima, I., Yamaguchi, S., Ito, T., Okamato, A., Kondo, H., Onda, S., and Takatori, K., Nature 430 (2004) p. 1009.Google Scholar
21.Ivanov, I.G., Hallin, C., Henry, A., Kordina, O., and Janzen, E., J. Appl. Phys. 80 (1996) p. 3504.Google Scholar
22. Measurement courtesy of Choyke, J., University of Pittsburgh, Pa.Google Scholar
23.Wang, L., Mater. Sci. Forum 457–460 (2004) p. 771.Google Scholar
24.Jenny, J.R., Malta, D.P., St. Müller, G., Powell, A.R., Tsvetkov, V.F., Hobgood, H.McD., Glass, R.C., and Carter, C.H. Jr., J. Electron. Mater. 32 (2003) 432.Google Scholar
25.Jenny, J.R., Malta, D.P., Calus, M.R., St. Müller, G., Powell, A.R., Tsvetkov, V.F., Hobgood, H.McD., Glass, R.C., and Carter, C.H. Jr., J., Mater. Sci. Forum 457–460 (2004) 35.Google Scholar
26.Jenny, J.R., Skowronski, M., Mitchel, W.C., Hobgood, H.M., Glass, R.C., Augustine, G., and Hopkins, R.H., J. Appl. Phys. 78 (1995) p. 3839.Google Scholar
27.Jenny, J.R., Skowronski, M., Mitchel, W.C., Hobgood, H.M., Glass, R.C., Augustine, G., and Hopkins, R.H., Appl. Phys. Lett. 68 (1996) p. 1963.Google Scholar
28.Son, N.T., Hai, P.N., and Jansen, E., Phys. Rev. B 63 201201(2001).Google Scholar
29.Lingner, Th., Greulich-Weber, S., Spaeth, J.-M., Gerstmann, U., Rauls, E., Hajnal, Z., Frauenheim, Th., and Ocerhof, H., Phys. Rev. B 64 245212(2001).Google Scholar
30.Shanabrook, B., Carlos, W., and Glaser, E., private communication.Google Scholar
31.Burk, A.A., O'Loughlin, M.J., Paisley, M.J., Powell, A.R., Brady, M.F., Leonard, R.T., St. Müller, G., and Allen, S.T., Mater. Sci. Forum 483–485 (2005) p. 137.Google Scholar
32.Kordina, O., Fornell, J.-O., Berge, R., and Nilsson, R., U.S. Patent 5,695,567 B2 (December 9, 1997).Google Scholar
33.Paisley, M., Sumakeris, J.J., and Kordina, O., U.S Patent 6,569,250 B2 (May 27, 2003).Google Scholar
34.Lendenmann, H., Dahlquist, F., Bergman, J.P., Bleichner, H., and Hallin, C., Mater. Sci. Forum 389–393 (2002) p. 1259.Google Scholar
35.Sumakeris, J.J., Singh, R., Paisley, M.J., Müller, S.G., Hobgood, H.M., Carter, C.H. Jr., and Burk, A.A. Jr., U.S. patent application 20030080842 (filed October 26, 2001).Google Scholar
36.Ha, S., Mieszkowski, P., Skowronski, M., and Rowland, L., J. Cryst. Growth. 244 (2002) p. 257.Google Scholar
37.Camara, N., Thuaire, A., Bano, E., and Zekentes, K., Mater. Sci. Forum 483–485 (2005) p. 773.Google Scholar
38.Sumakeris, J.J., U.S. patent application serial no. 008042 (filed September 22, 2003).Google Scholar
39.Skowronski, M., private communication.Google Scholar
40.Tsuchida, H., Miyanagi, T., Kamata, I., Nakamura, T., Izumi, K., Nakayama, K., Ishii, R., Asano, K., and Sugawara, Y., Mater. Sci. Forum 483–485 (2005) p. 97.Google Scholar