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Combinatorial Synthesis and Evaluation of Functional Inorganic Materials Using Thin-Film Techniques

Published online by Cambridge University Press:  31 January 2011

Ichiro Takeuchi ,
Robert Bruce van Dover  and
Hideomi Koinuma
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Abstract

Novel phases of functional inorganic chemical systems can be efficiently explored using high-throughput thin-film fabrication techniques coupled with rapid characterization schemes. High-throughput investigation of thin-film materials has already led to the discovery of new dielectric and magnetic materials. In this article, we review various high-throughput thin-film synthesis/evaluation techniques and discuss examples of exciting discoveries and new applications of combinatorial techniques.

Keywords

advanced dielectricscombinatorial methodscomposition spreadsconcurrent x-ray diffractometerthin filmslaser molecular-beam epitaxyscanning evanescent microwave probetransparent magnetic materials.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 4: Combinatorial Materials Science: What's New Since Edison? , April 2002 , pp. 301 - 308
Copyright
Copyright © Materials Research Society 2002

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References

1.Xiang, X.-D., Sun, X.-D., Briceño, G., Lou, Y., Wang, K.-A., Chang, H., Wallace-Freedman, W.G., Chen, S.-W., and Schultz, P.G., Science 268 (1995) p. 1738.CrossRefGoogle Scholar
2.Briceño, G., Chang, H., Sun, X.-D., Schultz, P.G., and Xiang, X.-D., Science 270 (1995) p. 273.CrossRefGoogle Scholar
3.Chang, H., Gao, C., Takeuchi, I., Yoo, Y., Wang, J., Schultz, P.G., Xiang, X.-D., Sharma, R.P., Downes, M., and Venkatesan, T., Appl. Phys. Lett. 72 (1998) p. 2185.CrossRefGoogle Scholar
4.Chang, H., Takeuchi, I., and Xiang, X.-D., Appl. Phys. Lett. 74 (1999) p. 1165.CrossRefGoogle Scholar
5.Takeuchi, I., Chang, H., Gao, C., Schultz, P.G., Xiang, X.-D., Sharma, R.P., Downes, M.J., and Venkatesan, T., Appl. Phys. Lett. 73 (1998) p. 894.CrossRefGoogle Scholar
6.Takeuchi, I., Chang, K., Sharma, R.P., Bendersky, L.A., Chang, H., Xiang, X.-D., Stach, E.A., and Song, C.-Y., J. Appl. Phys. 90 (2001) p. 2474.CrossRefGoogle Scholar
7.Koinuma, H., Solid State Ionics 108 (1998) p. 1.CrossRefGoogle Scholar
8.Koinuma, H., Appl. Surface Sci. (Proc. 1st Japan–U.S. Workshop on Combinatorial Materials Sci. & Tech., 2002) in press.Google Scholar
9.Koinuma, H., Koinda, T., Ohnishi, T., Komiyama, D., Lippmaa, M., and Kawasaki, M., Appl. Phys. A 69 (1999) p. S29.CrossRefGoogle Scholar
10.Kawasaki, M., Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezawa, T., Yoshimoto, M., and Koinuma, H., Science 266 (1994) p. 1540.CrossRefGoogle Scholar
11.Ohnishi, T., Komiyama, D., Koida, T., Ohashi, S., Stauter, C., Koinuma, H., Ohtomo, A., Lippmaa, M., Nakagawa, N., Kawasaki, M., Kikuchi, T., and Omote, K., Appl. Phys. Lett. 79 (2001) p. 536.CrossRefGoogle Scholar
12.Wei, T., Xiang, X.-D., Wallace-Freedman, W.G., and Schultz, P.G., Appl. Phys. Lett. 68 (1996) p. 3506.CrossRefGoogle Scholar
13.Gao, C. and Xiang, X.-D., Rev. Sci. Instrum. 69 (1998) p. 3846.CrossRefGoogle Scholar
14.Takeuchi, I., Wei, T., Duewer, F., Yoo, Y.K., Xiang, X.-D., Talyansky, V., Pai, S.P., Chen, G.J., and Venkatesan, T., Appl. Phys. Lett. 71 (1997) p. 2026.CrossRefGoogle Scholar
15.Chang, K.S., Aronova, M., Famodu, O., Takeuchi, I., Lofland, S.E., Hattrick-Simpers, J., and Chang, H., Appl. Phys. Lett. 79 (2001) p. 4411.CrossRefGoogle Scholar
16.Isaacs, E.D., Kao, M., Aeppli, G., Xiang, X.-D., Sun, X.-D., Schultz, P., Marcus, M.A., Cargill, G.S., and Haushalter, R., Appl. Phys. Lett. 73 (1998) p. 1820.CrossRefGoogle Scholar
17.Yoo, Y.K., Ohnishi, T., Wang, G., Duewer, F.W., Xiang, X.-D., Chu, Y.-S., Mancini, D.C., Li, Y.-Q., and O'Handley, R.C., Intermetallics 9 (2001) p. 541.CrossRefGoogle Scholar
18.Omote, K., Kikuchi, T., Harada, J., Kawasaki, M., Ohtomo, A., Ohtani, M., Ohnishi, T., Komiyama, D., and Koinuma, H., in Proc. SPIE, Vol. 3941 (SPIE—The International Society for Optical Engineering, Bellingham, WA, 2000) p. 84.Google Scholar
19.Chang, W., Horwitz, J.S., Kim, W.-J., Pond, J.M., Kirchoefer, S.W., and Chrisey, D.B., in Ferroelectric Thin Films VII, edited by Jones, R.E., Schwartz, R.W., Summerfelt, S.R., and Yoo, I.K. (Mater. Res. Soc. Symp. Proc. 541, Warrendale, PA, 1999) p. 699.Google Scholar
20.van Dover, R.B., Schneemeyer, L.F., and Fleming, R.M., Nature 392 (1998) p. 162.CrossRefGoogle Scholar
21.van Dover, R.B. and Schneemeyer, L.F., IEEE Electron Device Lett. 19 (1998) p. 329.CrossRefGoogle Scholar
22.van Dover, R.B., Siegrist, T., Schneemeyer, L.F., Green, M.L., and Manchanda, L., Nature (2002) submitted for publication.Google Scholar
23.Wilk, G.D., Wallace, R.M., and Anthony, J.M., J. Appl. Phys. 87 (2000) p. 484.CrossRefGoogle Scholar
24.Hubbard, K.J. and Schlom, D.G., J. Mater. Res. 11 (1996) p. 2757.CrossRefGoogle Scholar
25.Matsumoto, Y., Murakami, M., Shono, T., Hasegawa, T., Fukumura, T., Kawasaki, M., Ahmet, P., Chikyow, T., Koshihara, S., and Koinuma, H., Science 291 (2001) p. 854.CrossRefGoogle Scholar
26.Matsumoto, Y., Takahashi, R., Murakami, M., Koida, T., Fan, X.-J., Hasagawa, T., Fukumura, T., Kawasaki, M., Koshihara, S., and Koinuma, H., Jpn. J. Appl. Phys., Part 2: Lett. 40 (2001) p. L1204.CrossRefGoogle Scholar