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Epitaxial PZT films for MEMS printing applications

Published online by Cambridge University Press:  12 November 2012

Hiroshi Funakubo ,
Matthijn Dekkers ,
Alessia Sambri ,
Stefano Gariglio ,
Igor Shklyarevskiy  and
Guus Rijnders
Hiroshi Funakubo
Affiliation:
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology; funakubo.h.aa@m.titech.ac.jp
Matthijn Dekkers
Affiliation:
SolMateS, The Netherlands
Alessia Sambri
Affiliation:
University of Naples Federico II, Italy; sambri@fisica.unina.it
Stefano Gariglio
Affiliation:
Condensed Matter Physics Department, University of Geneva; stefano.gariglio@unige.ch
Igor Shklyarevskiy
Affiliation:
Oce-Technologies B.V., The Netherlands
Guus Rijnders
Affiliation:
University of Twente, The Netherlands; a.j.h.m.rijnders@utwente.nl
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Abstract

Films of piezoelectric and ferroelectric oxides have been widely investigated for various applications, including microelectromechanical systems (MEMS) for printing. Pb(Zr,Ti)O3 is of particular interest due to its excellent piezoelectric properties. Control of the density, crystalline orientation, and compositional uniformity is essential to obtain these properties. In this article, we review recent progress on the fabrication of epitaxial Pb(Zr,Ti)O3films, in which the aforementioned control can be achieved. We discuss the different approaches used for the deposition of the epitaxial piezoelectric layer as well as the achieved degrees of the epitaxy. Furthermore, the integration of these piezoelectric layers in MEMS and the corresponding performance are discussed.

Keywords

Microstructurecrystallinethin filmpiezoelectricepitaxy
Type
Research Article
Information
MRS Bulletin , Volume 37 , Issue 11: Thin-film piezoelectric MEMS , November 2012 , pp. 1030 - 1038
Copyright
Copyright © Materials Research Society 2012

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References

“Status of the MEMS industry” (Market and Technology Report, Yole Development, Rockville, MD, July 2011).Google Scholar
Groninger, M.A., Kruijt, P.G.M., Reinten, H., Schippers, R.H., Simons, J.M.M., European Patent EP 1 378 360 A1 (2003).Google Scholar
Kwon, K.S., Kim, W., Sens. Actuators, A 140, 75 (2007).CrossRefGoogle Scholar
Damjanovic, D., J. Am. Ceram. Soc. 88 (10), 2663 (2005).CrossRefGoogle Scholar
Kohli, M., Seifert, A., Muralt, P., Integr. Ferroelectr. 22 (1), 453 (1998).CrossRefGoogle Scholar
Desu, S.B., Yoo, I.K., J. Electrochem. Soc. 140, L133 (1993).CrossRefGoogle Scholar
Wouters, D.J., Willems, G., Groeseneken, G., Meas, H.E., Brooks, K., Integr. Ferroelectr. 7, 173 (1995).CrossRefGoogle Scholar
Baiatu, T., Waser, R., Hardtl, K.-H., J. Am. Ceram. Soc. 73, 1663 (1990).CrossRefGoogle Scholar
Shirane, G., Suzuki, K., J. Phys. Soc. Jpn. 7, 333 (1952).CrossRefGoogle Scholar
Polla, D.L., Francis, L.F., Annu. Rev. Mater. Sci. 28, 563 (1998).CrossRefGoogle Scholar
Jaffe, B., Roth, R.S., Marzullo, S., J. Appl. Phys. 25, 809 (1954).CrossRefGoogle Scholar
Noheda, B., Cox, D.E., Shirane, G., Gonzalo, J.A., Cross, L.E., Park, S.-E., Appl. Phys. Lett. 74, 2059 (1999).CrossRefGoogle Scholar
Guo, R., Cross, L.E., Park, S.-E., Noheda, B., Cox, D.E., Shirane, G., Phys. Rev. Lett. 84, 5423 (2000).CrossRefGoogle Scholar
Schwartz, R.W., Ballato, J., Heartling, G.H., in Ceramic Materials for Electronics, Buchanan, R.C., Ed. (Marcel Dekker, New York, 2004), pp. 207–322.Google Scholar
Takayama, R., Tomita, Y., J. Appl. Phys. 65, 1666 (1989).CrossRefGoogle Scholar
Scott, J., Araujo, C., Science 246, 1400 (1989).CrossRefGoogle Scholar
Tybell, T., Ahn, C.H., Triscone, J.-M., Appl. Phys. Lett. 75, 856 (1999).CrossRefGoogle Scholar
Fong, D., Stephenson, G., Streiffer, S., Eastman, J., Auciello, O., Fuoss, P., Thompson, C., Science 304, 1650 (2004).CrossRefGoogle Scholar
Morioka, H., Asano, G., Oikawa, T., Funakubo, H., Saito, K., Appl. Phys. Lett. 82, 4761 (2003).CrossRefGoogle Scholar
Vrejoiu, I., Le Rhun, G., Pintilie, L., Hesse, D., Alexe, M., Gosele, U., Adv. Mater. 18, 1657 (2006).CrossRefGoogle Scholar
Muralt, P., Polcawich, R., Trolier-Mckinstry, S., MRS Bull. 34, 658 (2009).CrossRefGoogle Scholar
Trolier-McKinstry, S., Muralt, P., J. Electroceram. 12, 7 (2004).CrossRefGoogle Scholar
Muralt, P., J. Am. Ceram. Soc. 91, 1385 (2008).CrossRefGoogle Scholar
Baek, S.H., Park, J., Kim, D.M., Aksyuk, V., Das, R.R., Bu, S.D., Felker, D.A., Lettieri, J., Vaithyanathan, V., Bharadwaja, S.S.N., Bassiri-Gharb, N., Chen, Y.B., Sun, H.P., Folkman, C.M., Jang, H.W., Kreft, D.J., Streiffer, S.K., Ramesh, R., Pan, X.Q., Trolier-McKinstry, S., Schlom, D.G., Rzchowski, M.S., Blick, R.H., Eom, C.B., Science 334, 958 (2011).CrossRefGoogle Scholar
Jeon, Y.B., Sood, R., Jeong, J.-H., Kim, S.-G., Sens. Actuators, A 122, 16 (2005).CrossRefGoogle Scholar
Roundy, S., Wright, P.K., Smart Mater. Struct. 13 1131 (2004).CrossRefGoogle Scholar
Song, H.-C., Kim, H.-C., Kang, C.-Y., Kim, H.-J., Yoon, S.-J., Jeong, D.-Y., J. Electroceram. 23, 301 (2009).CrossRefGoogle Scholar
Fang, H.-B., Liu, J.-Q., Xu, Z.-Y., Dong, L., Wang, L., Chen, D., Cai, B.-C., Liu, Y., Microelectron. J. 37, 1280 (2006).CrossRefGoogle Scholar
Shen, D., Park, J.-H., Ajitsaria, J., Choe, S.-Y., Wikle, H.C., Kim, D.-J., J. Micromech. Microeng. 18, 055017 (2008).CrossRefGoogle Scholar
Xu, T., Wang, Z., Miao, J., Yu, L., Li, C.M., Biosens. Bioelectron. 24, 638 (2008).CrossRefGoogle Scholar
Tsai, J.Z., Chen, C.J., Chen, W.Y., Liu, J.T., Liao, C.Y., Hsin, Y.M., Sens. Actuators, B 139, 259 (2009).CrossRefGoogle Scholar
Pang, W., Yan, L., Zhang, H., Yu, H., Kim, E.S., Tang, W.C., Appl. Phys. Lett. 88, 243503 (2006).CrossRefGoogle Scholar
Shin, S., Lee, N.-E., Park, H.-D., Park, J.-S., Lee, J., Integr. Ferroelectr. 80, 355 (2006).CrossRefGoogle Scholar
Park, S.E., Shrout, T.R., J. Appl. Phys. 82, 1804 (1997).CrossRefGoogle Scholar
Utsugi, S., Fujisawa, T., Ikariyama, R., Yasui, S., Nakaki, H., Yamada, T., Ishikawa, M., Matsushima, M., Morioka, H., Funakubo, H., Appl. Phys. Lett. 94, 052906 (2009).CrossRefGoogle Scholar
Fujisawa, T., Nakaki, H., Ikariyama, R., Yamada, T., Funakubo, H., Appl. Phys. Express 1, 085001 (2008).CrossRefGoogle Scholar
Utsugi, S., Fujisawa, T., Ehara, Y., Yamada, T., Matsushima, M., Funakubo, H., Appl. Phys. Lett. 96, 102905 (2010).CrossRefGoogle Scholar
Eom, C.B., Cava, R.J., Fleming, R.M., Phillips, J.M., van Dover, R.B., Marshall, J.H., Hsu, J.W.P., Krajewski, J.J., Peck, W.F. Jr., Science 258, 1799 (1992).CrossRefGoogle Scholar
Yokoyama, S., Honda, Y., Morioka, H., Oikawa, T., Funakubo, H., Iijima, T., Matsuda, H., Saito, K., Appl. Phys. Lett. 83, 2408 (2003).CrossRefGoogle Scholar
Yokoyama, S., Honda, Y., Morioka, H., Okamoto, S., Funakubo, H., Iijima, T., Matsuda, H., Saito, K., Yamamoto, T., Okino, H., Sakata, O., Kimura, S., J. Appl. Phys. 98, 94106 (2005).CrossRefGoogle Scholar
Cross, L.E., Mater. Chem. Phys. 43, 108 (1996).CrossRefGoogle Scholar
Fu, H., Cohen, R.E., Nature 403, 281 (2000).CrossRefGoogle Scholar
Kim, D.-J., Maria, J., Kingon, A.I., Streiffer, S.K., J. Appl. Phys. 93, 5568 (2003).CrossRefGoogle Scholar
Muralt, P., J. Amer. Ceram. Soc. 91, 1385 (2008).CrossRefGoogle Scholar
Reiner, J.W., Kolpak, A.M., Segal, Y., Garrity, K.F., Ismail-Beigi, S., Ahn, C.H., Walker, F.J., Adv. Mater. 22, 2919 (2010).CrossRefGoogle Scholar
Shin, D.S., Park, S.T., Choi, H.S., Choi, I.H., Lee, J.Y., Thin Solid Films 354, 251 (1999).CrossRefGoogle Scholar
Tokumitsu, E., Itani, K., Moon, B.-K., Ishiwara, H., Jpn. J. Appl. Phys. 34, 5202 (1995).CrossRefGoogle Scholar
Revesz, P., Li, J., Szabo, N. Jr., Mayer, W., Caudillo, D., Myers, E.R., Mater. Res. Soc. Symp. Proc. 243, 101 (1991).CrossRefGoogle Scholar
Sharma, A.K., Narayan, J., Jin, C., Kvit, A., Chattopadhyay, S., Lee, C., Appl. Phys. Lett. 76, 1458 (2000).CrossRefGoogle Scholar
Lee, M.B., Kawasaki, M., Yoshimoto, M., Koinuma, H., Jpn. J. Appl. Phys. 35, L574 (1996).CrossRefGoogle Scholar
Basit, N.A., Kim, H.K., Blachere, J., Appl. Phys. Lett. 73, 3941 (1998).CrossRefGoogle Scholar
Wang, Y., Ganpule, C., Liu, B.T., Li, H., Mori, K., Hill, B., Wuttig, M., Ramesh, R., Appl. Phys. Lett. 80, 97 (2002).CrossRefGoogle Scholar
Wang, Y.K., Tseng, T.Y., Lin, P., Appl. Phys. Lett. 80, 3790 (2002).CrossRefGoogle Scholar
Liu, B.T., Maki, K., So, Y., Nagarajan, V., Ramesh, R., Lettieri, J., Haeni, J.H., Schlom, D.G., Tian, W., Pan, X.Q., Walker, F.J., McKee, R.A., Appl. Phys. Lett. 80, 4801 (2002).CrossRefGoogle Scholar
Moona, B.K., Ishiwaraa, H., Tokumitsua, E., Yoshimoto, M., Thin Solid Films 385, 307 (2001).CrossRefGoogle Scholar
Ihara, M., Arimoto, Y., Jifuku, M., Kimura, T., Kodama, S., Yamawaki, H., Yamaoka, T., J. Electrochem. Soc. 129, 2569 (1982).CrossRefGoogle Scholar
Matsubara, S., Jpn. J. Appl. Phys. 24, 10 (1985).CrossRefGoogle Scholar
Fukumoto, H., Fukumoto, H., Imura, T., Osaka, Y., Appl. Phys. Lett. 55, 360 (1989).CrossRefGoogle Scholar
Wang, S.J., Ong, C.K., You, L.P., Xu, S.Y., Semicond. Sci. Technol. 15, 836 (2000).CrossRefGoogle Scholar
Lee, J.J., Thio, C.L., Desu, S.B., J. Appl. Phys. 78, 5073 (1995).CrossRefGoogle Scholar
Jiang, A.Q., Scott, J.F., Dawber, M., Wang, C., J. Appl. Phys. 92, 6756 (2002).CrossRefGoogle Scholar
Law, C.W., Tong, K.Y., Li, J.H., Li, K., Poon, M.C., Thin Solid Films 354, 162 (1999).CrossRefGoogle Scholar
Eom, C.B., van Dover, R.B., Phillips, J.M., Werder, D.J., Marshall, J.H., Chen, C.H., Cava, R.J., Fleming, R.M., Fork, D.K., Appl. Phys. Lett. 63, 2570 (1993).CrossRefGoogle Scholar
Chen, M-.S., Wu, T.-B., Wu, J.-M., Appl. Phys. Lett. 68, 1430 (1996).CrossRefGoogle Scholar
Lee, J., Choi, C.H., Park, B.H., Noh, T.W., Lee, J.K., Appl. Phys. Lett. 72, 3380 (1998).CrossRefGoogle Scholar
Hou, S.Y., Kwo, J., Watts, R.K., Cheng, J.-Y., Fork, D.K., Appl. Phys. Lett. 67, 1387 (1995).CrossRefGoogle Scholar
Dekkers, M., Nguyen, M.D., Steenwelle, R., te Riele, P.M., Blank, D.H.A., Rijnders, G., Appl. Phys. Lett. 95, 012902 (2009).CrossRefGoogle Scholar
Mori, H., Ishiwara, H., Jpn. J. Appl. Phys. 30, L1415 (1991); R.A. McKee, F.J. Walker, J.R. Conner, E.D. Specht, D.E. Zelmon, Appl. Phys. Lett. 59, 782 (1991); R.A. McKee, F.J. Walker, M.F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).CrossRefGoogle Scholar
Hubbard, K.J., Schlom, D.G., J. Mater. Res. 11, 2757 (1996); D.G. Schlom, J.H. Haeni, Mat. Res. Bull. 27, 198 (2002).CrossRefGoogle Scholar
Lettieri, J., Haeni, J.H., Schlom, D.G., J. Vac. Sci. Technol., A 20, 1332 (2002).CrossRefGoogle Scholar
Reiner, J.W., Garrity, K.F., Walker, F.J., Ismail-Beigi, S., Ahn, C.H., Phys. Rev. Lett. 101, 105503 (2008).CrossRefGoogle Scholar
Lin, A., Hong, X., Wood, V., Verevkin, A.A., Ahn, C.H., McKee, R.A., Walker, F.J., Specht, E.D., Appl. Phys. Lett. 78, 2034 (2001).CrossRefGoogle Scholar
Kim, D.M., Eom, C.B., Nagarajan, V., Ouyang, J., Ramesh, R., Vaithyanathan, V., Schlom, D.G., Appl. Phys. Lett. 88, 142904 (2006).CrossRefGoogle Scholar
Sambri, A., Gariglio, S., Torres Pardo, A., Triscone, J.-M., Stéphan, O., Reiner, J.W., Ahn, C.H., Appl. Phys. Lett. 98, 12903 (2011).CrossRefGoogle Scholar
Ouyang, J., Ramesh, R., Roytburd, A.L., Appl. Phys. Lett. 86, 152901 (2005).CrossRefGoogle Scholar
Kim, D.M., Eom, C.-B., Nagarajan, V., Ouyang, J., Ramesh, R., Vaithyanathan, V., Schlom, D.G., Appl. Phys. Lett. 88, 142904 (2006).CrossRefGoogle Scholar
Pérez de la Cruz, J., Joanni, E., Vilarinho, P.M., Kholkin, A.L., J. Appl. Phys. 108, 114106 (2010).CrossRefGoogle Scholar
Janolin, P.-E., J. Mater. Sci. 44, 5025 (2009).CrossRefGoogle Scholar
Gariglio, S., Stucki, N., Triscone, J.-M., Triscone, G., Appl. Phys. Lett. 90, 202905 (2007).CrossRefGoogle Scholar
Eom, C.B., Cava, R.J., Fleming, R.M., Phillips, J.M., van Dover, R.B., Marshall, J.H., Hsu, J.W.P., Krajewski, J.J., Peck, W.F. Jr., Science 258, 1799 (1992).CrossRefGoogle Scholar
Pertsev, N.A., Kukhar, V.G., Kohlstedt, H., Waser, R., Phys. Rev. B. 67, 054107 (2003).CrossRefGoogle Scholar
Nguyen, M.D., Dekkers, M., Houwman, E., Steenwelle, R., Wan, X., Roelofs, A., Schmitz-Kempen, T., Rijnders, G., Appl. Phys. Lett. 99, 252904 (2011).CrossRefGoogle Scholar
Nguyen, M.D., Nazeer, H., Karakaya, K., Pham, S.V., Steenwelle, R., Dekkers, M., Abelmann, L., Blank, D.H.A., Rijnders, G., J. Micromech. Microeng. 20, 085022 (2010).CrossRefGoogle Scholar
van Genuchten, E., Mikroniek 1, 5 (2011).Google Scholar