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Future of dynamic random-access memory as main memory

Published online by Cambridge University Press:  10 May 2018

Seong Keun Kim  and
Mihaela Popovici
Seong Keun Kim
Affiliation:
Center for Electronic Materials, Korea Institute of Science and Technology, South Korea; s.k.kim@kist.re.kr
Mihaela Popovici
Affiliation:
Semiconductor Technology and Systems Unit, IMEC, Belgium; mihaela.ioana.popovici@imec.be
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Abstract

Dynamic random-access memory (DRAM) is the main memory in most current computers. The excellent scalability of DRAM has significantly contributed to the development of modern computers. However, DRAM technology now faces critical challenges associated with further scaling toward the ∼10-nm technology node. This scaling will likely end soon because of the inherent limitations of charge-based memory. Much effort has been dedicated to delaying this. Novel cell architectures have been designed to reduce the cell area, and new materials and process technologies have been extensively investigated, especially for dielectrics and electrodes related to charge storage. In this article, the current issues, recent progress in and the future of DRAM materials, and fabrication technologies are discussed.

Keywords

nanoscalememorydielectricmetallic conductoratomic layer deposition
Type
Materials for Advanced Semiconductor Memories
Information
MRS Bulletin , Volume 43 , Issue 5: Materials for Advanced Semiconductor Memories , May 2018 , pp. 334 - 339
Copyright
Copyright © Materials Research Society 2018 

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