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Half-Heusler topological insulators

Published online by Cambridge University Press:  15 October 2014

Binghai Yan  and
Anne de Visser
Binghai Yan
Affiliation:
Max Planck Institute for Chemical Physics of Solids, Germany; binghai.yan@cpfs.mpg.de
Anne de Visser
Affiliation:
Van der Waals-Zeeman Institute, Faculty of Science, University of Amsterdam, The Netherlands; a.devisser@uva.nl
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Abstract

Ternary semiconducting or metallic half-Heusler compounds with an atomic composition 1:1:1 are widely studied for their flexible electronic properties and functionalities. Recently, a new material property of half-Heusler compounds was predicted based on electronic structure calculations: the topological insulator. In topological insulators, the metallic surface states are protected from impurity backscattering due to spin-momentum locking. This opens up new perspectives in engineering multifunctional materials. In this article, we introduce half-Heusler materials from the crystallographic and electronic structure point of view. We present an effective model Hamiltonian from which the topological state can be derived, notably from a non-trivial inverted band structure. We discuss general implications of the inverted band structure with a focus on the detection of the topological surface states in experiments by reviewing several exemplary materials. Special attention is given to superconducting half-Heusler materials, which have attracted ample attention as a platform for non-centrosymmetric and topological superconductivity.

Keywords

crystallographic structureelectronic materialelectronic structureelectrical propertiessuperconducting
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 10: Topological Insulators , October 2014 , pp. 859 - 866
Copyright
Copyright © Materials Research Society 2014 

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