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Large-area high-quality single crystal diamond

Published online by Cambridge University Press:  12 June 2014

Matthias Schreck ,
Jes Asmussen ,
Shinichi Shikata ,
Jean-Charles Arnault  and
Naoji Fujimori
Matthias Schreck
Affiliation:
Institute of Physics, University of Augsburg, Germany; matthias.schreck@physik.uni-augsburg.de
Jes Asmussen
Affiliation:
Michigan State University, USA; asmussen@egr.msu.edu
Shinichi Shikata
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan; s-shikata@aist.go.jp
Jean-Charles Arnault
Affiliation:
CEA LIST, France; jean-charles.arnault@cea.fr
Naoji Fujimori
Affiliation:
EDP Corporation, Japan; n.fujimori@d-edp.jp
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Abstract

Diamond offers a unique combination of extreme physical properties. For many technological applications, diamond samples of the highest crystal quality are required to utilize the ultimate potential of the material. Specifically, grain boundaries, as in polycrystalline films, have to be avoided. In this article, the two major current approaches of synthesizing single crystal diamond by chemical vapor deposition are described. In homoepitaxy, high gas pressure and high power density microwave discharges facilitating growth rates above 50 µm/h form the basis for the deposition of mm-thick single crystal samples. Cloning and tiling followed by homoepitaxial overgrowth are promising novel concepts aimed at an increase in the lateral dimensions. Heteroepitaxial deposition on large-area single crystals of a foreign material represents a second alternative approach. The state of the art for both concepts is summarized, and current as well as potential future applications are discussed.

Keywords

diamondchemical vapor depositionepitaxycrystal growth
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 6: CVD Diamond—Research, Applications, and Challenges , June 2014 , pp. 504 - 510
Copyright
Copyright © Materials Research Society 2014 

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