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Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

Published online by Cambridge University Press:  31 January 2011

P.C. van der Wilt ,
M.G. Kane ,
A.B. Limanov ,
A.H. Firester ,
L. Goodman ,
J. Lee ,
J.R. Abelson ,
A.M. Chitu  and
James S. Im
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Abstract

Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Keywords

crystallinemicroelectronicspolycrystalSi
Type
Research Article
Information
MRS Bulletin , Volume 31 , Issue 6 , June 2006 , pp. 461 - 465
Copyright
Copyright © Materials Research Society 2006

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