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Metamorphic transistors: Building blocks for hetero-integrated circuits

Published online by Cambridge University Press:  14 March 2016

Kenneth E. Lee  and
Eugene A. Fitzgerald
Kenneth E. Lee
Affiliation:
Singapore-Massachusetts Institute of Technology Alliance for Research and Technology, Singapore; kenneth.lee@smart.mit.edu
Eugene A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, and Singapore-Massachusetts Institute of Technology Alliance for Research and Technology, USA; eafitz@mit.edu
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Abstract

Metamorphic epitaxy offers the possibility of growing devices on wafers composed of different materials that might be larger than the native bulk substrates for a potential cost-reduction of III–V components; this is especially important when native substrates with desired lattice constants are not available. This article reviews the concepts of metamorphic epitaxy of III–V compound semiconductor materials and examines how they have been applied to the development of advanced transistor devices. These metamorphic devices are expected to be a key enabler of future heterogeneous integrated circuits in which Si and III–V devices are monolithically integrated on a wafer scale using complementary metal oxide semiconductor-like process flows.

Keywords

dislocationsepitaxyIII–Vchemical vapor deposition (CVD)
Type
Research Article
Information
MRS Bulletin , Volume 41 , Issue 3: Metamorphic Epitaxial Materials , March 2016 , pp. 210 - 217
Copyright
Copyright © Materials Research Society 2016 

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