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New techniques for imaging and identifying defects in electron microscopy

Published online by Cambridge University Press:  11 June 2019

Daniel S. Gianola ,
T. Ben Britton  and
Stefan Zaefferer
Daniel S. Gianola
Affiliation:
Materials Department, University of California, Santa Barbara, USA; gianola@ucsb.edu
T. Ben Britton
Affiliation:
Department of Materials, Imperial College London, UK; b.britton@imperial.ac.uk
Stefan Zaefferer
Affiliation:
Max-Planck-Institut für Eisenforschung, Germany; s.zaefferer@mpie.de
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Abstract

Defects in crystalline solids control the properties of engineered and natural materials, and their characterization focuses our strategies to optimize performance. Electron microscopy has served as the backbone of our understanding of defect structure and their interactions, owing to beneficial spatial resolution and contrast mechanisms that enable direct imaging of defects. These defects reside in complex microstructures and chemical environments, demanding a combination of experimental approaches for full defect characterization. In this article, we describe recent progress and trends in methods for examining defects using scanning electron microscopy platforms. Several emerging approaches offer attractive benefits, for instance, in correlative microscopy across length scales and in in situ studies of defect dynamics.

Keywords

defectsscanning electron microscopy (SEM)scanning transmission electron microscopy (STEM)crystal
Type
Advances in In situ Nanomechanical Testing
Information
MRS Bulletin , Volume 44 , Issue 6: Advances in In situ Nanomechanical Testing , June 2019 , pp. 450 - 458
Copyright
Copyright © Materials Research Society 2019 

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