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Optimization of amorphous semiconductors and low-/high-k dielectrics through percolation and topological constraint theory

Published online by Cambridge University Press:  10 January 2017

Michelle M. Paquette ,
Bradley J. Nordell ,
Anthony N. Caruso ,
Masanori Sato ,
Hiroyuki Fujiwara  and
Sean W. King
Michelle M. Paquette
Affiliation:
Department of Physics and Astronomy, University of Missouri–Kansas City, USA; paquettem@umkc.edu
Bradley J. Nordell
Affiliation:
Extreme Light Laboratory, Department of Physics and Astronomy, University of Nebraska–Lincoln; and University of Missouri–Kansas City, USA; bnordell2@unl.edu
Anthony N. Caruso
Affiliation:
Department of Physics and Astronomy, University of Missouri–Kansas City, USA; carusoan@umkc.edu
Masanori Sato
Affiliation:
Department of Electrical and Electronic Engineering, Gifu University, Japan; maka08404649@gmail.com
Hiroyuki Fujiwara
Affiliation:
Department of Electrical, Electronic and Computer Engineering, Gifu University, Japan; fujiwara@gifu-u.ac.jp
Sean W. King
Affiliation:
Logic Technology Development, Intel Corporation, USA; sean.king@intel.com
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Abstract

We explore some aspects of the optimization of amorphous semiconductors as well as low- and high-dielectric-constant (low-/high-k) materials viewed purely from the perspective of percolation and topological constraint theories. We specifically illustrate how percolation, constraint theory, and mean network coordination, 〈r〉, play underlying roles in determining the electrical and mechanical properties of amorphous semiconducting and dielectric materials as well as interfaces that are important for modern micro-/nanoelectronic devices.

Keywords

amorphoussemiconductingdielectricmetal–insulator transition
Type
Research Article
Information
MRS Bulletin , Volume 42 , Issue 1: Material Functionalities from Molecular Rigidity , January 2017 , pp. 39 - 44
Copyright
Copyright © Materials Research Society 2017 

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