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Phase change materials and phase change memory

Published online by Cambridge University Press:  14 August 2014

Simone Raoux ,
Feng Xiong ,
Matthias Wuttig  and
Eric Pop
Simone Raoux
Affiliation:
Institute Nanospectroscopy for Energy Material Design and Optimization, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Germany; simone.raoux@helmholtz-berlin.de
Feng Xiong
Affiliation:
Electrical Engineering, Stanford University, USA; fxiong@stanford.edu
Matthias Wuttig
Affiliation:
Physikalisches Institut and Jülich Aachen Research Alliance – Fundamentals of Future Information Technology, RWTH Aachen University, Germany; wuttig@physik.rwth-aachen.de
Eric Pop
Affiliation:
Electrical Engineering, Stanford University, USA; epop@stanford.edu
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Abstract

Phase change memory (PCM) is an emerging technology that combines the unique properties of phase change materials with the potential for novel memory devices, which can help lead to new computer architectures. Phase change materials store information in their amorphous and crystalline phases, which can be reversibly switched by the application of an external voltage. This article describes the advantages and challenges of PCM. The physical properties of phase change materials that enable data storage are described, and our current knowledge of the phase change processes is summarized. Various designs of PCM devices with their respective advantages and integration challenges are presented. The scaling limits of PCM are addressed, and its performance is compared to competing existing and emerging memory technologies. Finally, potential new applications of phase change devices such as neuromorphic computing and phase change logic are outlined.

Keywords

phase transformationelectrical propertiescrystallographic structure
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 8: New Materials for Post-Si Computing , August 2014 , pp. 703 - 710
Copyright
Copyright © Materials Research Society 2014 

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