Removal Rates in Chemical–Mechanical Planarization of Copper and Silica Surfaces Increase with Particle Concentration When Using Dilute Solutions

Siari S. Sosa

doi:10.1557/mrs2002.294

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Removal Rates in Chemical–Mechanical Planarization of Copper and Silica Surfaces Increase with Particle Concentration When Using Dilute Solutions

Published online by Cambridge University Press: 31 January 2011

Siari S. Sosa

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Type: Research/Researchers
Information: MRS Bulletin , Volume 27 , Issue 12 , December 2002 , pp. 942

DOI: https://doi.org/10.1557/mrs2002.294 [Opens in a new window]
Copyright: Copyright © Materials Research Society 2002

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Removal Rates in Chemical–Mechanical Planarization of Copper and Silica Surfaces Increase with Particle Concentration When Using Dilute Solutions

Volume 27, Issue 12
Siari S. Sosa
DOI: https://doi.org/10.1557/mrs2002.294

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Removal Rates in Chemical–Mechanical Planarization of Copper and Silica Surfaces Increase with Particle Concentration When Using Dilute Solutions

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