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SiC-Seeded Crystal Growth

Published online by Cambridge University Press:  29 November 2013

R.C. Glass ,
D. Henshall ,
V.F. Tsvetkov  and
C.H. Carter Jr.
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To take advantage of the superior properties of SiC-based devices, the industry must be able to produce high-quality SiC homoepitaxial films on single-crystal SiC wafers. Silicon- and GaAs-based semiconductor devices have taken advantage of the industry's ability to produce largediameter, high-quality substrates to develop large-volume, low-cost devices. For the same reasons, the development of low-cost, high-quality single-crystal SiC substrates has been pursued since the first Lely (nonseeded growth process) platelets were used to make devices. Currently several groups (ATMI, USA; Northrop Grumman Research Center, USA; Okmetic Ltd., Finland; Nippon Steel Corporation, Japan; and our company, Cree Research, Inc., USA) are working toward SiC substrate fabrication. University researchers also play an important role in the search for solutions to fundamental outstanding issues. These efforts are important because the future success of the SiC industry is closely related to the successful development of the SiC bulk growth process.

Type
Silicon Carbide Electronic Materials and Devices
Information
MRS Bulletin , Volume 22 , Issue 3 , March 1997 , pp. 30 - 35
Copyright
Copyright © Materials Research Society 1997

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References

1. An efficient search of the latest work from these groups is accomplished by reading chapter 1 in Proc. 6th Int. Conf. SiC Related Mater. 1995, edited by Nakashima, S., Matsunami, H., Yoshida, S., and Harima, H. (Institute of Physics Conference Series No. 142, Bristol, 1996) p. 1.Google Scholar
2.Neudeck, P.G. and Powell, J.A., IEEE Electron Device Lett. 15 (2) (1994) p. 63.CrossRefGoogle Scholar
3.Tairov, Yu.M. and Tsvetkov, V.F., J. Cryst. Growth 43 (2) (1978) p. 209.CrossRefGoogle Scholar
4.Davis, R.F., Carter, C.H. Jr., and Hunter, C.E., U.S. Patent No. Re 34,861 (February 14, 1995).Google Scholar
5.Stein, R.A. and Lanig, P., Mater. Sci. Eng. B 11 (1992) p. 69.CrossRefGoogle Scholar
6.Barrett, D.L., McHugh, J.P., Hobgood, H.M., Hopkins, R.H., McMullin, P.G., and Clarke, R.C., J. Cryst. Growth 128 (1993) p. 358.CrossRefGoogle Scholar
7.Tuominen, M., Yakimova, R., Bakin, A.S., Ivanov, I.G., Henry, A., Vehanen, A., and Janzen, E., in 6th Int. Conf. SiC Related Mater., edited by Nakashima, S., Matsunami, H., Yoshida, S., and Harima, H. (Institute of Physics Conference Series No. 142, Bristol, 1996) p. 45.Google Scholar
8.Stein, R.A., Physica B 185 (1993) p. 211.CrossRefGoogle Scholar
9.Takanaka, N., Nishino, S., and Saraie, J., in Proc. 6th Int. Conf. SiC Related Mater., edited by Nakashima, S., Matsunami, H., Yoshida, S., and Harima, H. (Institute of Physics Conference Series No. 142, Bristol, 1996) p. 813.Google Scholar
10.Wang, S., Dudley, M., Carter, C.H. Jr., Tsvetkov, V.F., and Fazi, C., in Applications of Synchrotron Radiation Techniques to Materials Science II, edited by Terminello, L.J., Shinn, N.D., Ice, G.E., dAmico, K.L., and Perry, D.L. (Mater. Res. Soc. Symp. Proc. 375, Pittsburgh, 1995) p. 281.Google Scholar
11.Glass, R.C., Kjellberg, L-O., Tsvetkov, V.F., Sundgren, J-E., and Janzén, E., J. Cryst. Growth 132 (1993) p. 504.CrossRefGoogle Scholar
12.Sunagawa, I. and Bennema, P., J. Cryst. Growth 53 (1981) p. 490.CrossRefGoogle Scholar
13.Hobgood, H.M., Glass, R.C., Augustine, G., Hopkins, R.H., Jenny, J., Skowronski, M., Mitchel, W.C., and Roth, M., Appl. Phys. Lett. 66 (1995) p. 1364.CrossRefGoogle Scholar