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STM studies of epitaxial graphene

Published online by Cambridge University Press:  23 November 2012

Swee Liang Wong ,
Han Huang ,
Wei Chen  and
Andrew T.S. Wee
Swee Liang Wong
Affiliation:
Department of Physics, National University of Singapore; g0901893@nus.edu.sg
Han Huang
Affiliation:
Department of Physics, National University of Singapore; phyhh@nus.edu.sg
Wei Chen
Affiliation:
Department of Physics, National University of Singapore; phycw@nus.edu.sg
Andrew T.S. Wee
Affiliation:
Department of Physics, National University of Singapore; phyweets@nus.edu.sg
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Abstract

This article reviews the use of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to characterize the physical and electronic properties of epitaxial graphene. Topographical variations revealed by STM allow the determination of the number of graphene layers and the detection of lattice mismatch between the graphene and the substrate, as well as rotational disorder. STS allows the local electronic characterization of graphene. STM/STS can also be used to perform local studies of graphene modification through processes such as atomic/molecular adsorption and intercalation.

Keywords

scanning tunneling microscopy (STM) (158)molecular beam epitaxy (MBE) (352)epitaxy (344)adsorption (248)
Type
Research Article
Information
MRS Bulletin , Volume 37 , Issue 12: Graphene Fundamentals and Functionalities , December 2012 , pp. 1195 - 1202
Copyright
Copyright © Materials Research Society 2012

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