Xenon Flash Lamp Annealing Shown to be Effective for Processing Ultrathin HfO2 Films for Advanced CMOS Gate Dielectrics

Jeremiah T. Abiade

doi:10.1557/mrs2006.35

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Xenon Flash Lamp Annealing Shown to be Effective for Processing Ultrathin HfO2 Films for Advanced CMOS Gate Dielectrics

Published online by Cambridge University Press: 31 January 2011

Jeremiah T. Abiade

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Type: Research/Researchers
Information: MRS Bulletin , Volume 31 , Issue 2: Materials for Micro- and Nanofluidics , February 2006 , pp. 83 - 84

DOI: https://doi.org/10.1557/mrs2006.35 [Opens in a new window]
Copyright: Copyright © Materials Research Society 2006

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Xenon Flash Lamp Annealing Shown to be Effective for Processing Ultrathin HfO2 Films for Advanced CMOS Gate Dielectrics

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Xenon Flash Lamp Annealing Shown to be Effective for Processing Ultrathin HfO2 Films for Advanced CMOS Gate Dielectrics

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