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Intrinsically low-resistance carbon nanotube-metal contacts mediated by topological defects

Published online by Cambridge University Press:  13 July 2012

Han Seul Kim ,
Ga In Lee ,
Hu Sung Kim ,
Jeung Ku Kang  and
Yong-Hoon Kim
Han Seul Kim
Affiliation:
Graduate School of EEWS, KAIST, Daejeon 305-701, Korea
Ga In Lee
Affiliation:
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea
Hu Sung Kim
Affiliation:
Graduate School of EEWS, KAIST, Daejeon 305-701, Korea
Jeung Ku Kang*
Affiliation:
Department of Materials Science and Engineering, KAIST, Daejeon 305-701, Korea, Graduate School of EEWS, KAIST, Daejeon 305-701, Korea
Yong-Hoon Kim*
Affiliation:
Graduate School of EEWS, KAIST, Daejeon 305-701, Korea, KAIST Institute for the NanoCentury, KAIST, Daejeon 305-701, Korea
*
Address all correspondence to Yong-Hoon Kim and Jeung Ku Kang aty.h.kim@kaist.ac.kr and jeungku@kaist.ac.kr
Address all correspondence to Yong-Hoon Kim and Jeung Ku Kang aty.h.kim@kaist.ac.kr and jeungku@kaist.ac.kr
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Abstract

Applying a first-principles computational approach, we study the electronic and charge transport properties of the interfaces between metals and capped carbon nanotubes (CNTs) with various arrangements of topological defects. Observing the length scaling of resistance, we first show that capped CNTs exhibit only one CNT-body-determined low-slope scaling and the resulting very low long-length-limit resistance. The intrinsically low resistance (absence of Schottky-barrier-dominated high-slope scaling) of capped CNTs is next analyzed by the local density of states, which shows the formation of unusual propagating-type metal-induced gap states originating from the topological defect states that are well connected with CNT edge and body states.

Type
Research Letters
Information
MRS Communications , Volume 2 , Issue 3 , September 2012 , pp. 91 - 96
Copyright
Copyright © Materials Research Society 2012

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