Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-10T10:29:39.853Z Has data issue: false hasContentIssue false
  • English
  • Français

(100) Epitaxial and (111) Polycrystalline Spin Valve Heterostructures on si (100): Magnetotransport and the Importance of Interface Mixing in Ion Beam Sputtering

Published online by Cambridge University Press:  15 February 2011

Hyun S. Joo ,
Imran Hashim ,
Harry A. Atwater  and
Thomas J. Watson
Hyun S. Joo
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Imran Hashim
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Thomas J. Watson
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Get access

Abstract

We have investigated magnetoresistance properties of (100) epitaxial, (11) textured and polycrystalline spin valve heterostructures of the form Ni80Fe20/Cu/NiNi80Fe20/Fe50Mn50 on (100) Si substrates by ultra high vacuum (UHV) ion beam sputtering at room temperature. Magnetoresistance was measured as a function of Cu interlayer thickness (ti) with 10 Å ≤ti ≤ 100 Å and the maximum was found at 20 Å in the case of (100) epitaxial spin valves. Highly (11) textured spin valves with heterostructure configurations similar to the (100) spin valves were found to have a slightly lower magnetoresistance than the (100) heterostructures, but the functional dependence of the magnetoresistance on ti was very similar.

Interface mixing during the sputtering process by energetic neutral bombardment was found to significantly affect the magnetoresistance. Samples were made under various sputtering conditions (gas pressure, ion beam energy, target and substrate configuration) that could enhance or suppress high energy neutral bombardment of the growing film surface. Samples made under the conditions that suppressed neutral bombardment showed higher magnetoresistance and more abrupt interfaces as confirmed by small angle X-ray diffraction analysis of interface mixing by energetic neutral bombardment during sputter deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 384: Symposium L – Magnetic Ultrathin films, Multilayers and Surfaces , 1995 , 409
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Egelhoff, W. F. and Kief, M. T., IEEE Trans. Magn., 28, 2742 (1992).Google Scholar
2. Hood, R. Q., Falicov, L. M., and Penn, D. R., Phys. Rev. B, 49, 368 (1994).Google Scholar
3. Min, K. I.. and Joo, S. K., J. Appl. Phys., 75, 4632 (1994).Google Scholar
4. Nakatani, R., Hoshino, K., and Sugita, Y., Jpn. J. Appl. Phys., 33, 133 (1994).Google Scholar
5. Speriosu, V. S., Nozieres, J. P., Gurney, B. A., Dieny, B., Huang, T. C., and Lefakis, H., Phys. Rev. B, 47, 11579 (1993).Google Scholar
6. Hashim, I., Park, B., and Atwater, H. A., Appl. Phys. Lett., 63, 2833 (1993).Google Scholar
7. Hashim, I. and Atwater, H. A., J. Appl. Phys., 75, 6516 (1994).Google Scholar
8. Chang, C. A., J. Vac. Sci. Tech., 9, 98 (1991).Google Scholar