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3D Heterogeneous Integration using MEMS Devices for RF Applications

Published online by Cambridge University Press:  11 July 2012

Fumihiko Nakazawa ,
Xiaoyu Mi ,
Takeaki Shimanouchi ,
Tadashi Nakatani ,
Takashi Katsuki ,
Hiroaki Inoue ,
Osamu Toyoda  and
Satoshi Ueda
Fumihiko Nakazawa
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Xiaoyu Mi
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Takeaki Shimanouchi
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Tadashi Nakatani
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Takashi Katsuki
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Hiroaki Inoue
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Osamu Toyoda
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Satoshi Ueda
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
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Abstract

This paper presents novel 3D heterogeneous integrations using MEMS Devices for RF applications. We propose a 3D heterogeneous integration method that combines the advantages of LTCC, passive integration, and MEMS technologies. The basic concept is to form a large-size LTCC wiring wafer and then to form high-Q passives or MEMS filters directly on the wafer surface. Other functional devices such as ICs, SAWs, and MEMS switches are mounted above the surface-formed devices. A miniaturized duplexer consisted of IPD, SAW, and film bulk acoustic resonator (FBAR); and a next generation duplexer module consisted of an MEMS tunable filter and a piezoelectric transducer (PZT)-actuated RF MEMS switch were constructed to demonstrate its feasibility and effectiveness.

Keywords

ceramicmicroelectro-mechanical (MEMS)thin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1427: Symposium B – Heterogeneous Integration Challenges of MEMS, Sensor and CMOS LSI , 2012 , mrss12-1427-b01-05
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Tilmans, H. A C, Raedt, W. D., and Beyne, E., “MEMS for wireless communications: ‘from RF-MEMS components to RF-MEMS-SIP’,” J. Micromech. Microeng., vol. 13, pp. S139–S163, 2003.Google Scholar
2. Mi, X., Takahashi, T., Ueda, S., “Integrated Passives on LTCC for Achieving Chip-Sized-Modules,” Proc. 38th EUMC, pp. 607–610, 2008.Google Scholar
3. Posada, G., et al. ., “Ar Implantation, a Passivation Technique for High-Resistivity Silicon within the MCM-D Technology”, Proc. 1st EuMIC, pp. 21–24, 2006.Google Scholar
4. Kim, D., Jeong, I., Lee, J., and Kwon, Y., “High Performance RF Passive Integration on a Si Smart Substrate for Wireless Applications,” ETRI Journal, vol. 25, Number 2, pp. 65–72, 2003.Google Scholar
5. Ho, S. W., et al. ., “High RF Performance TSV Silicon Carrier for High Frequency Application”, Proc. IEEE. ECTC, pp. 1946–1952, 2008.Google Scholar
6. Mi, X. and Ueda, S., “Integrated Passives for High-Frequency Applications”, in Advanced Microwave Circuits and Systems, ISBN 978-953-307-087-2, pp. 249–289, April 2010.Google Scholar
7. Mi, X., Toyoda, O., Ueda, S., “MEMS Tunable Bandpass Filters on High-k LTCC,” Proc. The 23rd IEEE Int. Conf. on MEMS, pp. 787–790, 2010.Google Scholar
8. Mi, X., et al. ., “Miniaturized Microwave Tunable Bandpass Filters on High-k LTCC,” Proc. 2010 APMC, pp. 139–142, 2010.Google Scholar
9. Mi, X., Toyoda, O., Ueda, S., Nakazawa, F., “Miniaturized Microwave Tunable Bandpass Filters on High-k LTCC with Integrated Resistive Vias as Bias-T”, Proc. IEEE. IMS2011 Google Scholar
10. Nakatani, T., Katsuki, T., Okuda, H., Toyoda, O., Ueda, S., and Nakazawa, F., “PZT Actuated Reliable RF-MEMS Switch using Single Crystal Silicon Asymmetric Beam” Proc. IEEE Asia Pacific Microwave conference, 2011 Google Scholar
11. Nakazawa, F., shimanouchi, T., Nakatani, T., Katsuki, T., Okuda, H., Toyoda, O., and Ueda, S. “Effect of frequency in 3D integration of a PZT Actuated MEMS Switch using Single Crystal Silicon Asymmetric Beam” Proc. IEEE 3DIC, 2011 Google Scholar