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50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors – Characterization and Inspection of Operation.

Published online by Cambridge University Press:  09 March 2011

David A. J. Moran ,
Donald A. MacLaren ,
Samuele Porro ,
Richard Hill ,
Helen McLelland ,
Phillip John  and
John Wilson
David A. J. Moran
Affiliation:
Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, U.K
Donald A. MacLaren
Affiliation:
Dept. of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, U.K
Samuele Porro
Affiliation:
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, EH14 4AS, U.K.
Richard Hill
Affiliation:
Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, U.K
Helen McLelland
Affiliation:
Dept. of Electronics and Electrical Engineering, University of Glasgow, Glasgow, G12 8LT, U.K
Phillip John
Affiliation:
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, EH14 4AS, U.K.
John Wilson
Affiliation:
School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh, EH14 4AS, U.K.
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Abstract

Hydrogen terminated diamond field effect transistors (FET) of 50nm gate length have been fabricated, their DC operation characterised and their physical and chemical structure inspected by Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS). DC characterisation of devices demonstrated pinch-off of the source-drain current can be maintained by the 50nm gate under low bias conditions. At larger bias, off-state output conductance increases, demonstrating most likely the onset of short-channel effects at this reduced gate length.

Keywords

diamonddevicesnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1282: Symposium A – Diamond Electronics and Bioelectronics—Fundamentals to Applications IV , 2011 , mrsf10-1282-a16-01
Copyright
Copyright © Materials Research Society 2011

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References

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