Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-14T17:45:51.150Z Has data issue: false hasContentIssue false

6 Watt Segmented Power Generator Modules using Bi2Te3 and (InGaAs)1-x(InAlAs)x Elements Embedded with ErAs Nanoparticles

Published online by Cambridge University Press:  01 February 2011

Gehong Zeng
Affiliation:
gehong@ece.ucsb.edu, University of California, Department of Electrical and Computer Engineering, Santa Barbara, California, United States
Je-Hyeong Bahk
Affiliation:
jhbahk@ece.ucsb.edu, University of California, Department of Electrical and Computer Engineering, Santa Barbara, California, United States
Ashok T Ramu
Affiliation:
ashok.ramu@gmail.com, University of California, Department of Electrical and Computer Engineering, Santa Barbara, California, United States
John E Bowers
Affiliation:
bowers@ece.ucsb.edu, University of California, Department of Electrical and Computer Engineering, Santa Barbara, California, Cambodia
Hong Lu
Affiliation:
luhong@engineering.ucsb.edu, University of California, Materials Department, Santa Barbara, California, United States
Arthur C Gossard
Affiliation:
gossard@engineering.ucsb.edu, University of California, Materials Department, Santa Barbara, California, United States
Zhixi Bian
Affiliation:
zxbian@soe.ucsc.edu, University of California, Electrical Engineering Department, Santa Cruz, California, United States
Mona Zebarjadi
Affiliation:
mona@soe.ucsc.edu, University of California, Electrical Engineering Department, Santa Cruz, California, United States
Ali Shakouri
Affiliation:
ali@soe.ucsc.edu, University of California, Electrical Engineering Department, Santa Cruz, California, United States
Get access

Abstract

We report the fabrication and characterization of segmented element power generator modules of 16 x 16 thermoelectric elements consisting of 0.8 mm thick Bi2Te3 and 50 μm thick ErAs:(InGaAs)1-x(InAlAs)x with 0.6% ErAs by volume. Erbium Arsenide metallic nanoparticles are incorporated to create scattering centers for middle and long wavelength phonons, and to form local potential barriers for electron filtering. The thermoelectric properties of ErAs:(InGaAs)1-x(InAlAs)x were characterized in terms of electrical conductivity and Seebeck coefficient from 300 K up to 830 K. Generator modules of Bi2Te3 and ErAs:(InGaAs)1-x(InAlAs)x segmented elements were fabricated and an output power of 6.3 W was measured. 3D finite modeling shows that the performance of thermoelectric generator modules can further be enhanced by the improvement of the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Shakouri, A. and Bowers, J. E., “Heterostructure integrated thermionic coolers,Applied Physics Letters, vol. 71, pp. 12341236, SEP 1 1997.Google Scholar
[2] Faleev, S. V. and Leonard, F., “Theory of enhancement of thermoelectric properties of materials with nanoinclusions,” Physical Review B, vol. 77, pp. -, Jun 2008.Google Scholar
[3] Zebarjadi, M., Esfarjani, K., Shakouri, A., Bahk, J.-H., Bian, Z., Zeng, G., Bowers, J. E., Lu, H., Zide, J. M. O., and Gossard, A., submitted to Applied Physics Letters 2008.Google Scholar
[4] Venkatasubramanian, R., Siivola, E., Colpitts, T., and O'Quinn, B., “Thin-film thermoelectric devices with high room-temperature figures of merit,” Nature, vol. 413, pp. 597602, OCT 11 2001.Google Scholar
[5] Kim, W., Singer, S. L., Majumdar, A., Vashaee, D., Bian, Z., Shakouri, A., Zeng, G., Bowers, J. E., Zide, J. M. O., and Gossard, A. C., “Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices,” Applied Physics Letters, vol. 88, p. 242107, 2006.Google Scholar
[6] Zide, J. M. O., Vashaee, D., Bian, Z. X., Zeng, G., Bowers, J. E., Shakouri, A., and Gossard, A. C., “Demonstration of electron filtering to increase the Seebeck coefficient in In0.53Ga0.47As/In0.53Ga0.28Al0.19As superlattices,” PHYSICAL REVIEW B, vol. 74, p. 205335, 2006.Google Scholar
[7] Bhagat, S., Han, H., and Alford, T. L., “Tungsten-titanium diffusion barriers for silver metallization,” Thin Solid Films, vol. 515, pp. 19982002, Dec 5 2006.Google Scholar