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AB Initio Calculations for Defects in Silicon-Based Amorphous Semiconductors

Published online by Cambridge University Press:  21 February 2011

Nobuhiko Ishii  and
Tatsuo Shimizu
Nobuhiko Ishii
Affiliation:
Dept. of Electrical Engineering, Fukui Institute of Technology, Fukui 910, Japan
Tatsuo Shimizu
Affiliation:
Dept. of Electronics, Kanazawa University, Kanazawa 920, Japan
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Abstract

We have calclulated the ESR hyperfine parameters of threefold-coordinated Si atoms and twofold-coordinated P and N atoms in Si-based amorphous semiconductors using the density functional theory with a local-spin-density approximation. These calculated results have been compared with the observed ESR results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 305
Copyright
Copyright © Materials Research Society 1992

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References

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