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Ab-Initio Study of Boron Diffusion Retardation in Si1-xGex

Published online by Cambridge University Press:  01 February 2011

Yonghyun Kim ,
Taras A. Kirichenko ,
Sanjay K. Banerjee  and
Gyeong S. Hwang
Yonghyun Kim
Affiliation:
ykim3@ece.utexas.edu, The University of Texas at Austin, Microelectronics Research Center, 10100 Burnet Road, Bldg 160, MER 2.608C, Austin, TX, 78758-4445, United States
Taras A. Kirichenko
Affiliation:
Taras.Kirichenko@freescale.com, Freescale Semiconductor, 3501 ED Bluestein Blvd, MD K10, Austin, TX, 78721, United States
Sanjay K. Banerjee
Affiliation:
anupam@uts.cc.utexas.edu, The University of Texas at Austin, Microelectronics Research Center, Austin, TX, 78758, United States
Gyeong S. Hwang
Affiliation:
gshwang@che.utexas.edu, The University of Texas at Austin, Department of Chemical Engineering, Austin, TX, 78712, United States
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Abstract

We study B diffusion in the presence of Ge by using a first principles density functional theory calculation. We investigate the relative stability and migration barriers of Si and Ge interstitials as well as binding energy and diffusion pathway of Boron-Interstitial (BI) pair comprised of Boron and Si or Ge interstitials. We find that Ge interstitials are more stable but less mobile compared to Si interstitials, leading to higher population of interstitials in the implanted Si1-xGex. However, BI pair comprised of Ge interstitial and Boron is less stable compared to Si interstitial –Boron pair and migration barrier of BI pair in presence of Ge is increased, leading to less TED.

Keywords

SiGediffusion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C03-08
Copyright
Copyright © Materials Research Society 2006

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