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1Improvement of Thick a-Si Radiation Detectors by Field Profile Tailoring

Published online by Cambridge University Press:  21 February 2011

J.S. Drewery ,
G. Cho ,
T. Jing ,
S.N. Kaplan ,
A. Mireshghi ,
V. Perez-Mendez  and
D. Wildermuth
J.S. Drewery
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
T. Jing
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
S.N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
A. Mireshghi
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
D. Wildermuth
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
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Abstract

Application of thick (∼50 μm) a-Si p-i-n diodes as a direct radiation detector for minimum ionizing particles is hampered by the need to apply large bias voltages in order fully to deplete the detecting intrinsic layer, which typically contains 5–10×1014 ionizable dangling bonds per cm3. By insertion of thin p-type layers at intervals within the intrinsic layer, the required depletion voltage can be reduced by a factor of at least 1/(n+1) where n is the number of layers inserted. This principle is demonstrated for devices approximately 12μm in thickness. It is shown that electron losses within the p type layer can be kept to minimum by choice of a low doping concentration for the introduced p layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1063
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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