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200 °C Preparation of SiNx Passivation Films for PZT Ferroelectric Capacitors by Catalytic CVD

Published online by Cambridge University Press:  21 March 2011

Toshiharu Minamikawa ,
Yasuto Yonezawa ,
Yoshikazu Fujimori ,
Takashi Nakamura ,
Atsushi Masuda  and
Hideki Matsumura
Toshiharu Minamikawa
Affiliation:
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, JAPAN, minami@irii.go.jp Industrial Research Institute of Ishikawa, Ro-1 Tomizu-machi, Kanazawa, Ishikawa 920-0223, JAPAN
Yasuto Yonezawa
Affiliation:
Industrial Research Institute of Ishikawa, Ro-1 Tomizu-machi, Kanazawa, Ishikawa 920-0223, JAPAN
Yoshikazu Fujimori
Affiliation:
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, JAPAN Industrial Research Institute of Ishikawa, Ro-1 Tomizu-machi, Kanazawa, Ishikawa 920-0223, JAPAN
Takashi Nakamura
Affiliation:
Rohm Co., Ltd., 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, JAPAN
Atsushi Masuda
Affiliation:
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, JAPAN
Hideki Matsumura
Affiliation:
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, JAPAN
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Abstract

Feasibility of SiNx passivation films at low substrate temperatures prepared by catalytic chemical vapor deposition (Cat-CVD) is studied for ferroelectric nonvolatile random access memories (FRAMs). SiNx films were prepared at low substrate temperatures of 100 °C, 175 °C and 200 °C using Cat-CVD. Adjusting on flow rate ratio of SiH4/NH3, the refractive index of SiNx film, deposited at 175 °C and 200 °C, measured by ellipsometry is controlled around 2.0. SiNx films, with the refractive index around 2.0, deposited at only 200 °C show the following properties. 1) No oxidation during air exposure for 3 months was observed for the films. 2) Etching rate of the films in buffered HF is 20 nm/min. The dense SiNx film, which is resistive for oxidation in air exposure and dissolution in buffered HF, is prepared at 200 °C and the film is suitable to the passivation of ferroelectric capacitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC2.10.1
Copyright
Copyright © Materials Research Society 2001

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References

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