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Activation Mechanisms in Ion-Implanted GaAs

Published online by Cambridge University Press:  21 February 2011

N. Morris  and
B. J. Sealy
N. Morris
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
B. J. Sealy
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
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Abstract

Rapid thermal annealing has been used to study the electrical activation mechanisms for magnesium and selenium implants in GaAs. By analysing the changes in electrical activity as a function of annealing time and temperature, a model has been developed which accurately predicts the electrical properties following the post-implant annealing stage. The model has been used to study the activation of other ions, particularly zinc, beryllium, tin and sulphur, the results of which will be compared with those of magnesium and selenium. The results suggest that the mechanism for electrical activation is dominated by the diffusion of gallium, arsenic or vacancies. The paper will present the model and discuss the activation mechanisms of the ions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 189
Copyright
Copyright © Materials Research Society 1988

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References

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