Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-02-05T21:32:11.232Z Has data issue: false hasContentIssue false
  • English
  • Français

An Auger Electron Spectroscopy (AES) Investigation into the Effect Annealing on the Phase Distribution of Ion Implanted Oxygen in Silicon

Published online by Cambridge University Press:  22 February 2011

C G Tuppen ,
G J Davies ,
M R Taylor  and
R Heckingbottom
C G Tuppen
Affiliation:
British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK
G J Davies
Affiliation:
British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK
M R Taylor
Affiliation:
British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK
R Heckingbottom
Affiliation:
British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK
Get access

Abstract

Buried oxide layers, formed by high dose ion implantation, have been examined using Auger depth profiling. The phase distribution of oxygen in the wings of the implant profile and effects of high temperature annealing, have been investigated. Ion beam induced cascade mixing, which occurs during sputter etching, limits the minimum detectable size of SiO2 precipitates. However, it is possible to minimise this effect by reducing the ion beam energy. At very small precipitate sizes (<100Å) silicon atoms at the edge of the precipitate particles will make a major contribution to the Si KLL Auger spectrum. A previously reported theoretical model has been expanded to take account of this phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 537
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1] Arrowsmith, R P, Glaccum, A E, Hemment, P L F, Taylor, M R and Tuppen, C G, presented at the 'IEEE SOS/SOI Technology Workshop', Wyoming, USA, Oct 1983.Google Scholar
2] Pinizzotto, R F, Vaandrager, B L, Matteson, S, Lam, H W, Malhi, S D S, Handi, A H and McDaniel, F D, IEEE Trans. Nucl. Sci., NS-30, 1718, (1983).CrossRefGoogle Scholar
3] Lam, H W, Pinizzotto, R F, Yuan, H T and Bellavance, D W, Elect. Lett., 17, 356, (1981).Google Scholar
4[ Tuppen, C G and Davies, G J, presented at the Fall meeting of the Electrochemical Society, Washington DC, USA, Oct 1983 and submitted to J. Electrochem. Soc.Google Scholar
5] Taylor, M R, Tuppen, C G, Arrowsmith, R P, Dobson, R M, Glaccum, A E, Wilson, M C, Booker, G R and Hemment, P L F, presented at Microsc. Semicond. Mater. Conf. Oxford, UK 1983,Inst. Phys. Conf. Ser. No.67:SectionlO,p485.Google Scholar
6] Hayashi, T, Maeyama, S and Yoshii, S, Jap. J.of Appl. Phys., 19,1111,(1980).CrossRefGoogle Scholar
7] Hemment, P L F, Maydell-Ondrusz, E, Stephens, K G, Butcher, J, Ioannov, J and Alderman, J, presented at 'Ion Beam Modification of Materials', Grenoble, France, Sept 1982.Google Scholar
8] Izumi, K, Doken, M and Ariyoshi, H, Elect. Lett. 14, 593, (1978).Google Scholar
9] Temkin, R J, J. Non-Cryst. Solids, 17, 215, (1975).Google Scholar
10] Phillip, H R, J. Non-Cryst. Solids, 8–10, 627, (1972).Google Scholar
11] Anderson, H H, Appl. Phys., 18, 131, (1979).CrossRefGoogle Scholar
12] Courtesy of Dr Hemment, P L F, Surrey University, Guildford, UK.Google Scholar
13] Hemment, P L F, Maydell-Ondrusz, E, Stephens, K G, Arrowsmith, R P, Glaccum, A E, Kilner, J A, Wilson, M C and Booker, G R, presented at 'The Symposium on Ion Sources and Ion Assisted Technology' and 'The 4th International Conference on Ion and Plasma Assisted Techniques', Kyoto, Japan, Sept 1983.Google Scholar
14] Parsons, J R in 'Ion Implantation in Semiconductors' by Mayer, J W, Eriksson, L and Davies, J A, Academic Press, New York 1970.Google Scholar
15] Mazey, D J, Nelson, R J and Barnes, R J, Phil. Mag., 17, 1145, (1968).Google Scholar
16] Mikkelson, J C Jr., Appl. Phys. Lett., 42, 695, (1983).Google Scholar
17] Binns, M J, Brown, W P, Wilkes, J G, Newman, R C, Livingston, F M, Messolaras, S and Stewart, R J, Appl. Phys. Lett., 42, 525, (1983).Google Scholar
18] Fair, R B, J. Appl. Phys., 54, 388, (1983).Google Scholar
19] Shimura, F and Tsuya, H, J. Electrochem. Soc., 129, 1062, (1982).CrossRefGoogle Scholar