Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-15T06:56:16.519Z Has data issue: false hasContentIssue false
  • English
  • Français

An Investigation of Photo-Induced Degradation by Means of Photothermal Deflection Spectroscopy

Published online by Cambridge University Press:  26 February 2011

M. S. Bennett ,
S. Wiedeman ,
J. L. Newton  and
K. Rajan
M. S. Bennett
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
S. Wiedeman
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
J. L. Newton
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
K. Rajan
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
Get access

Abstract

Absorption measurements of as deposited and photodegraded intrinsic amorphous hydrogenated silicon films were made using photothermal deflection spectroscopy (PDS). The films were light-soaked in situ using HeNe laser light to simulate AM1 illumination. An increase in subbandgap absorption occurred predominantly near energies of 1.2eV. A simple model was developed in which a density of states function is hypothesized and the resulting optical absorption at subgap energies is calculated. The measured absorption could be well matched in all cases by assuming a single peak of defect states at or slightly below the Fermi level. Further, the observed changes in optical absorption due to degradation could be modeled by increasing the density of the single peak of defect states and moving the Fermi level towards the valence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 577
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Boccara, A. C., Fournier, D., Jackson, W. B. and Amer, N. M., Opt. Lett. 5 (1980) p. 377.Google Scholar
2. 3M Company, Commercial Chemical Division, 3M Center, St. Paul, MN.Google Scholar
3. Wiedeman, S., Bennett, M. S., and Newton, J. L., in Mat. Res. Soc. Symp. Proc. Vol.94, edited by Adler, D., Madan, A., Thompson, M. and Hamakawa, Y. (MRS, Pittsburg, 1987) (to be published).Google Scholar
4. Jackson, W. B., Biegelson, D. K., Nemanich, R. J. and Knights, J. C., Appl. Phys. Lett. 42 (1983) p. 105.Google Scholar
5. Skumanich, A., Amer, N. M. and Jackson, W. B., Phys. Rev. B31 (1984) p. 2263.Google Scholar
6. Boustarret, E., Jausse, D., Chaussat, C. and Boulitrop, F., in 11th Int'l. Conf. on Amorphous & Liquid Semiconductors (Rome, 1985).Google Scholar
7. Staebler, D. L. and Wronski, C. R., J. Appl. Phys. 51 (1980) p. 3262.Google Scholar