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Published online by Cambridge University Press: 10 February 2011
Microwave phase shifters have been fabricated from (YBa2Cu3 O7-δ or Au)/SrTiO3 and Au/BaxSr1−xTiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counterparts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is ≈5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.