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Anisotropic Dry Etching of Aluminum Films Deposited on Topographic Steps

Published online by Cambridge University Press:  28 February 2011

Jer-Shen Maa  and
Bernard Halon
Jer-Shen Maa
Affiliation:
RCA Laboratories, Princeton, NJ 08540
Bernard Halon
Affiliation:
RCA Laboratories, Princeton, NJ 08540
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Abstract

During the etching of aluminum film, if the film is deposited on a surface which contains sharp topological steps, and if the etching proceeds mainly along the vertical direction, it becomes very difficult to remove the remaining residue.Experimental results are discussed in terms of effects of native oxide film and polymer film formation.A simple model is proposed to reveal the residue formation process and to explain the problem encountered during the removal of the etched residue.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 59
Copyright
Copyright © Materials Research Society 1986

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