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Anomalous Luminescence Properties of GaAs grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

I. Szafranek ,
M.A. Plano ,
M.J. McCollum ,
S.L. Jackson ,
S.A. Stockman ,
K.Y. Cheng  and
G.E. Stillman
I. Szafranek
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana - Champaign, IL 61801.
M.A. Plano
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana - Champaign, IL 61801.
M.J. McCollum
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana - Champaign, IL 61801.
S.L. Jackson
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana - Champaign, IL 61801.
S.A. Stockman
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana - Champaign, IL 61801.
K.Y. Cheng
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana - Champaign, IL 61801.
G.E. Stillman
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana - Champaign, IL 61801.
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Abstract

A shallow acceptor-like defect labeled “A” is frequently incorporated in molecular beam epitaxial GaAs. We report here anomalous photoluminescence effects that are induced by this defect. With increasing concentration of the “A” defect: (1) neutral and ionized donor-bound exciton peaks disappear almost completely even for donor concentration as high as 7×1014 cm-3 and compensation ratio ND/NA≈0.3; (2) a new, sharp line emerges at 1.5138 eV, and (3) the relative intensity and line shape of the free exciton transition change dramatically. These observations are discussed in the perspective of previous reports, where similar effects were, in our opinion, misinterpreted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 193
Copyright
Copyright © Materials Research Society 1990

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References

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